MOSFET 16N 15 Search Results

Contextual Info: STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 £2 - 1 6A - T0-220/T0-220FP _STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP 16N E06 S TP 16N E06FP 60 V 60 V < 0.100 a < 0.100 a 16 A 11 A • . . . . . TYPICAL R D S ( o n ) = 0.08 Î2

Contextual Info: S T Y 16N A 90 N - CHANNEL 900V - 0.5 ft - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIM IN ARY DATA TYPE STY 16N A90 • . . . . . . . V dss RDS on Id 900 V < 0.54 Q. 16 A TYPICAL RDS(on) = 0.5 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

16NE10

Contextual Info: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

STD16NE10

Contextual Info: STD16NE10 N - CHANNEL 100V - 0.07ft - 16A - IPAK/DPAK STripFET MOSFET TYP E V STD 16N E10 dss 100 V R d S o ii Id < 0.1 Q. 16 A . • TYPICAL RDS(on) =0.07 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

pwm controller 1.5V Vcc

Abstract: PWM Controllers db7030 geyserville
Contextual Info: POWER MANAGEMENT: Switching Regulator PWM Controllers Drivers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep VID Prgm uA External MOSFET Driver Model 10 ADP3410 off: 0.925 to 2.00 Model Designator VRM Rev Level VID Prgm

16N40E

Abstract: high power pulse generator with mosfet mosfet 16n 15
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 16N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS

Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

ADP3168

Abstract: mosfet 3067 ADP3205 ADP3415 "PWM Controllers" ADP3160 ADP3161 ADP3162 ADP3163 ADP3164
Contextual Info: POWER MANAGEMENT: Switching PWM Controllers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep Model Designator VID D/A Output Vout VRM Rev Level uA External MOSFET Driver Model VID Prgm 10 1 ADP3410 ADP3415 0.925 to 2.00

sgsp531

Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92

TIC 122 Transistor

Abstract: TY16N80E TY16N y16n
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY16N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 16 AMPERES 800 VOLTS This high volta ge M O S FET uses an advanced term inatio n

Si9165

Abstract: TSSOP-20
Contextual Info: SÌ9165 V 'S H A Y - ~ ▼ High Freq. 600-mA Synchronous Buck/Boost Converter New Product FEATURES • • • • Voltage M ode Control Fully Integrated M O SFET Sw itches

16-NSO

Abstract: AX832 ax2003
Contextual Info: POWER MANAGEMENT BATTERY CHARGERS MULTI-FUNCTION SUPPLIES ★ir MAX845 ★ MAX2003 75 0m W isolated tran sfo rm er d river (N iC d/N iM H . tem p, slope detection) + M A X 2 00 3A (im p rov ed M A X 2003) M A X 4 71 /4 72 (cu rren t-sen se am p. fuel g au g e) (see O p A m p table)

16N25E

Abstract: gsp5000 20F40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

tp16n

Contextual Info: S G S -1H 0M S 0N IMOigœiILliera *® STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V dss R D S o n Id STP16N E06L S TP16N E06LFP 60 V 60 V < 0 .12 Q. < 0 .12 Q. 16 A 11 A • . . . . . TYPICAL RDS(on) = 0.09

eel 16n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n

IRF7343 N

Abstract: RF710 IRF7343
Contextual Info: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

TH 82420

Abstract: C205Z1
Contextual Info: STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220Q - 16A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP16N B25 STP16NB25FP 250 V 250 V < 0 .2 8 Î2 < 0 .2 8 Q 16 A 8 A • TYPICAL RDS(on) = 0.220 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED

ADG508

Contextual Info: ANALOG DEVICES 4/8 Channel Fault-Protected Analog Multiplexers ADG508F/ADG509F/ADG528F* F U N C T IO N A L B LO C K D IAG RA M S FEATURES Low On Resistance 300 i l typ Fast Switching Times t 0N 250 ns max t 0FF 250 ns max Low Power Dissipation (3.3 mW max)

4804c

Abstract: L4804C
Contextual Info: May 1999 PRELIMINARY ^Ék Micro Linear ML4804 Power Factor Correction and PWM Controller Combo GENERAL DESCRIPTION FEATURES The ML4804 is a controller for power factor corrected, switched mode power supplies. Rawer Factor Correction PFC allows the use of smaller, lower cost bulk

Contextual Info: A p r ili 9 97 PRELM M ARY ^Ék Micro Linear ML4901 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES TheM L 4901 h ig h c u rre n ts y n c h ro n o u s b u c k c o n tm H e rh a s b e e n d e sig n e d to p ro v id e h ig h efficien cy D C /t> C

MANCHESTER ENCODER, DECODER AND CVSD SYSTEM

Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is