MOSFET 176 Search Results

Contextual Info: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFN044

Abstract: smd diode 44a
Contextual Info: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

Contextual Info: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features Description • RDS on = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDB44N25

Contextual Info: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Mosfet J49

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND

Contextual Info: FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

mosfet 4702

Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZ2210N50L

Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

Contextual Info: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild

MRF173

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

MRF177

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz

an799

Abstract: MOSFET 500V 15A mosfet 55 nf 06 an799 microchip tc1426 TC4431 application 348 mosfet MOSFET 6A "MOSFET " 400V TC4425
Contextual Info: AN799 MOSFET 驱动器与 MOSFET 的匹配设计 作者： Jamie Dunn Microchip Technology Inc. 2. 由于 MOSFET 驱动器吸收静态电流而产生的功 耗。 公式 2： 简介 当今多种 MOSFET 技术和硅片制程并存，而且技术进 步日新月异。要根据 MOSFET 的电压 / 电流或管芯尺

Contextual Info: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

MRF173

Contextual Info: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz

210ts

Contextual Info: GU General Use Type SOP Series Multi-function (MOSFET & optocoupler) 16 Pin Type UL File No.: E43149 CSA File No.: LR26550 10.37 .408 4.4 .173 2.1 .083 2 MOSFET Relay and 1 optocoupler type 10.37 .408 1 MOSFET Relay and 2 optocouplers type 4.4 .173 2.1 .083

alc 885

Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Contextual Info: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been