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    MOSFET 176 Search Results

    MOSFET 176 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 176 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDB86135

    Untitled

    Abstract: No abstract text available
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1545A IRFN044

    IRFN044

    Abstract: smd diode 44a
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1545A IRFN044 IRFN044 smd diode 44a

    Untitled

    Abstract: No abstract text available
    Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP80N06 145pF) O-220

    mosfet 4702

    Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942

    Untitled

    Abstract: No abstract text available
    Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features Description • RDS on = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDB44N25

    FDB44N25

    Abstract: No abstract text available
    Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDB44N25 FDB44N25

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND


    Original     		PDF MRF171A Mosfet J49

    Untitled

    Abstract: No abstract text available
    Text: FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDPF44N25T FDPF44N25T

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    mosfet 4702

    Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364

    IXZ2210N50L

    Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		PDF FQP45N15V2 FQPF45N15V2 FQPF45N15V2

    Untitled

    Abstract: No abstract text available
    Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild


    Original     		PDF FDMS86200DC

    MRF173

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173 MRF173. AN721, MRF173

    MRF177

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz


    Original     		PDF MRF177/D MRF177 MRF177/D

    an799

    Abstract: MOSFET 500V 15A mosfet 55 nf 06 an799 microchip tc1426 TC4431 application 348 mosfet MOSFET 6A "MOSFET " 400V TC4425
    Text: AN799 MOSFET 驱动器与 MOSFET 的匹配设计 作者： Jamie Dunn Microchip Technology Inc. 2. 由于 MOSFET 驱动器吸收静态电流而产生的功 耗。 公式 2： 简介 当今多种 MOSFET 技术和硅片制程并存，而且技术进 步日新月异。要根据 MOSFET 的电压 / 电流或管芯尺


    Original     		PDF AN799 500V14AN an799 MOSFET 500V 15A mosfet 55 nf 06 an799 microchip tc1426 TC4431 application 348 mosfet MOSFET 6A "MOSFET " 400V TC4425

    Untitled

    Abstract: No abstract text available
    Text: FQP45N15V2 / FQPF45N15V2 N-Channel QFET MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQP45N15V2 FQPF45N15V2

    MRF173

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173/D MRF173

    210ts

    Abstract: No abstract text available
    Text: GU General Use Type SOP Series Multi-function (MOSFET & optocoupler) 16 Pin Type UL File No.: E43149 CSA File No.: LR26550 10.37 .408 4.4 .173 2.1 .083 2 MOSFET Relay and 1 optocoupler type 10.37 .408 1 MOSFET Relay and 2 optocouplers type 4.4 .173 2.1 .083


    Original     		PDF E43149 LR26550 16-Pin 083inch AQS210TS) AQS210T2S) AQS210TS 210ts

    alc 885

    Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
    Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173/D MRF173 alc 885 "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200

    Untitled

    Abstract: No abstract text available
    Text: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDC8601