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    MOSFET 17N80C3 Search Results

    MOSFET 17N80C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 17N80C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    17n80c3

    Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 17n80c3 PDF

    17n80c3

    Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 17n80c3 PDF

    MOSFET 17N80c3

    Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3
    Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 PDF

    MOSFET 17N80c3

    Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c
    Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c PDF

    MOSFET 17N80c3

    Abstract: 17n80
    Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80 PDF

    MOSFET 17N80c3

    Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47
    Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 PDF

    Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 PDF

    MOSFET 17N80c3

    Abstract: 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80
    Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80 PDF

    MOSFET 17N80c3

    Abstract: 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47
    Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47 PDF

    MOSFET 17N80c3

    Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3
    Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PDF

    MOSFET 17N80c3

    Abstract: MOSFET 17N80c3 Data sheet Diode S17
    Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 MOSFET 17N80c3 Data sheet Diode S17 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF