MOSFET 1NV Search Results

003A

Abstract: 4502 MOSFET
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2807-01 L,S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E ¡APPROVED I DR A W N CHECKED Í Fuji Electric Co.,Ltd. V, Y 0257-R-004a I.Scope This specifies Fuji Power MOSFET 2SK2807-01L.S

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASH-2 HIGH-SPEED SWITCHING USE FS30ASH-2 • 2.5V DRIVE • VD S S . •100V • rDS ON (MAX) . • I d .

fs10smj-3

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS10SMJ-3 | HIGH-SPEED SWITCHING USE FS10SMJ-3 • 4V DRIVE • V dss .150V • ros ON (MAX) . 160mQ • Id . 10A

MITSUBISHI CNC

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70KMJ-03 HIGH-SPEED SWITCHING USE FS70KMJ-03 • 4V D R IVE • VDSS .30V • rDS ON (MAX) .1 2 m Q

P channel MOSFET 50A

Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS100UM-03 I f HIGH-SPEED SWITCHING USE j FS100UM-03 • 10V DRIVE • VDSS .30V • rDS ON (MAX) . 5 .4 m Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-03 HIGH-SPEED SWITCHING USE FS10KM-03 OUTLINE DRAWING Dimensions in mm 10±0.3 2.8 ±0.2 • 10V DRIVE • VDSS . 30V • TDS ON (MAX) .

710323

Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS30UMH-03 | HIGH-SPEED SWITCHING USE FS30UMH-03 OUTLINE DRAWING Dimensions in mm 10.5MAX. . 4 .5 1.3 # • 2.5V DRIVE • Vdss . 30V • rDS ON (MAX) .46mi!

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE FS50UMJ-06 • 4V DRIVE • V d s s . 6 0 V • ro s ON (MAX) . 2 0 m Q

H12B

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KMJ-3 HIGH-SPEED SWITCHING USE FS2KMJ-3 OUTLINE DRAWING D im en sio n s in mm 10 ±0.3 2.6 ±0.2 • 4V DRIVE • Vd ss . •150V • rDS ON (MAX) .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE FS50VSJ-3 OUTLINE DRAWING Dimensions in mm ,4-5 i 1.3 I 0 .5 • 4V DRIVE • V D S S . •150V • TDS ON (MAX) .

2N4351

Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

2n4416 transistor spice

Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS

U401 mosfet

Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage

fs70um-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70UM-03 HIGH-SPEED SWITCHING USE FS70UM-03 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 , 1.3 0 3.6 ¡ u / - 2.54 / 2.54 0.5 r < i! «s .1 2 3 4> • 10V DRIVE • V d s s .

BUZ78A

Abstract: cascode mosfet switching universal flyback cascode mosfet current mirror ersa PWR-SMP520BNC PWR-SMP520 cascode PWM IC 16-PIN DIP BUK444-800A
Contextual Info: PWR-SMP520 PWM Controller 1C 110/220 VAC Input MOSFET Cascode Drive Output POWER INTEGRATIONS, INC. Product Highlights Integrated Pre-regulator and CMOS Controller • Im plem ents isolated pow er supply • Supplies up to 10 W from rectified 110 VAC and 20 W

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

24v inverters schematic diagram

Abstract: IVN5200HND IVN5200HNE IVN5200HNF IVN5201HND IVN5201HNE IVN5201HNF IVNS201HND IVN5201
Contextual Info: oblili " IVN5200/1 HN Series n-Channel Enhancement-mode Vertical Power MOSFET FEATURES • High speed, high current switching A P P L IC A T IO N S • Switching power supplies • Inherent current sharing capability when paralleled • DC to DC inverters

intersil jfet

Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

12V dc to 60V dc circuit diagram

Abstract: 24v inverters schematic diagram IVN5200 IVN5200KND IVN5201 IVN5200KNE IVN5200KNF IVN5201KND IVN5201KNE IVN5201KNF
Contextual Info: IVN5200/1 KN Series n-Channel Enhancement-mode Vertical Power MOSFET A PP LIC A TIO N S • Switching power supplies FEATURES • High speed, high current switching • Inherent current sharing capability when paralleled • DC to DC inverters • Extremely low drive currents

mosfet 4425

Abstract: 4425 mosfet 4425 ic 6783a 4424 SO 8
Contextual Info: WTELEDYNE COMPONENTS TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Tough CMOS Construction Latch-Up Protected: Will Withstand 1.5A Reverse Current Logic Input Will Withstand Negative Swing Up to 5V ESD kV

Contextual Info: MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING Dim ensions in mm 1.8 MAX. 1.27 Q ®® SOURCE GATE ® ® ® ® DRAIN • 4V DRIVE • V d s s .-30V • rDS ON (MAX). 20mi2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VSJ-06 HIGH-SPEED SWITCHING USE FS5VSJ-06 OUTLINE DRAWING ^ _10.5MAX\ Dimensions in mm ^ < 1.3 ; \ " T i l= n ->-0.3 y -o 4 0.5 , ; 1 0.8 J 11 'J : 2 -3: O :- 2 -.4 c\i 5 GATE DRAIN ,3) SOURCE ij DRAIN • 4V DRIVE • VDSS .60V

high speed Zener Diode

Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Contextual Info: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors

diode ZENER A8

Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
Contextual Info: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns