MOSFET 20A 500V Search Results

datasheet irfp460 mosfet

Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

P20nm50fp

Contextual Info: STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features Type VDSS @TJmax RDS(on) ID STB20NM50 550V < 0.25Ω 20A STB20NM50-1 550V < 0.25Ω 20A STP20NM50 550V < 0.25Ω

P20NM50

Abstract: P20NM50FP STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
Contextual Info: STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features Type VDSS @TJmax RDS(on) ID STB20NM50 550V < 0.25Ω 20A STB20NM50-1 550V < 0.25Ω 20A STP20NM50 550V < 0.25Ω

P20NM50

Abstract: P20NM50FP STP20NM50FP STB20NM50 B20NM50 p20*50 STB20NM50-1 STP20NM50
Contextual Info: STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features Type VDSS @TJmax RDS(on) ID STB20NM50 550V < 0.25Ω 20A STB20NM50-1 550V < 0.25Ω 20A STP20NM50 550V < 0.25Ω

irfp460 dc motor circuit

Abstract: IRFP460 TB334
Contextual Info: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

P25NM60

Abstract: W25NM60N
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 500V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

20n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,

Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

SEM 238

Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FRK254D FRK254H FRK254R
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free

50v transformer

Abstract: irfb20n50kpbf f1010 IRFB20N50K FIGURE13
Contextual Info: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free

Contextual Info: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement

f1010

Abstract: FIGURE13
Contextual Info: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free

IRHNA7460SE

Abstract: HEXFET Power MOSFET SMD2
Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Contextual Info: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

400V to 12V DC Regulator

Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
Contextual Info: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

IRFP460N

Abstract: AN1001 313X0
Contextual Info: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRFP460 APPLICATION NOTE

Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

FIGURE13

Abstract: IRF1010 IRFB20N50K
Contextual Info: PD - 94418 IRFB20N50K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 0.21Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement

HARRIS SEMICONDUCTOR APPLICATION NOTES

Contextual Info: ^ U H a r r is U S E M I C O N D U C T O R FRK254D, FRK254R, F fí K2S4H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

IRFB20N50K

Abstract: FIGURE13
Contextual Info: PD - 94418A SMPS MOSFET IRFB20N50K HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l VDSS RDS(on) typ. ID 500V 0.21Ω 20A Benefits l Low Gate Charge Qg results in Simple Drive Requirement