MOSFET 20N60 Search Results
MOSFET 20N60 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 20N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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mosfet 20n60
Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
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20N60 20N60 O-247 QW-R502-587 mosfet 20n60 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET | |
mosfet 20n60
Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
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20N60 20N60 20N60L-T47-T 20N6ntarily, QW-R502-587 mosfet 20n60 IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is |
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20N60 20N60 QW-R502-587 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is |
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20N60 20N60 QW-R502-587 | |
mosfet 20n60
Abstract: 20n60
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20N60 20N60 QW-R502-587 mosfet 20n60 | |
20N60
Abstract: 20N60 mosfet
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20N60 20N60 QW-R502-587 20N60 mosfet | |
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Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
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20N60C5M O-220 | |
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions |
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20N60C5M O-220 | |
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol |
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20N60C5M O-220 20070704a | |
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Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
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20N60C5M O-220 | |
20n60c5
Abstract: 20n60c5m
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20N60C5M O-220 20090209d 20n60c5 20n60c5m | |
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Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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20N60C5M O-220 20090209d | |
20n60c5Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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20N60C5M O-220 20080523c 20n60c5 | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET |
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20N60C5 O-247 O-220 20080523d | |
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20n60c5
Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N
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20N60C5 O-247 O-220 20080523d 20n60c5 IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N | |
20n60cContextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600 |
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ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c | |
20N60C
Abstract: UPS 380v
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ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v | |
UPS 380v
Abstract: 20n60c power switching
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20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching | |
20n60c
Abstract: UPS 380v IXKC 20n60c
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ISOPLUS220TM 20N60C 220TM ISOPLUS220 20n60c UPS 380v IXKC 20n60c | |
20n60cContextual Info: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features |
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20N60C ISOPLUS220TM E72873 20n60c | |
20N60CContextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 |
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20N60C ISOPLUS220TM E72873 20080523a 20N60C | |
20N60C
Abstract: IXKC 20n60c
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20N60C ISOPLUS220TM E72873 20N60C IXKC 20n60c | |
20n60c
Abstract: IXKC 20n60c E72873 A8711
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20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711 | |
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Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G |
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20N60C5 20N60C5 O-247 O-220 Appli300 | |