MOSFET 20V 120A Search Results

JESD97

Abstract: L120NH02V STL120NH02V
Contextual Info: STL120NH02V N-channel 20V - 0.0025Ω - 120A - PowerFLAT 6x5 STripFET™ III Power MOSFET Target Specification General features Type VDSS RDS(on) ID STL120NH02V 20V <0.003Ω 28A(1) 1. Value limited by wire bonding • Improved die-to-footprint ratio

schematic diagram reverse forward motor

Abstract: STB210NF02 STB210NF02-1 STB210NF02T4 STP210NF02
Contextual Info: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB210NF02/-1 STP210NF02 • ■ ■ VDSS RDS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0026Ω

STB210NF02

Abstract: STB210NF02-1 STB210NF02T4 STP210NF02
Contextual Info: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC • ■ ■ TYPE VDSS R DS on ID PD STB210NF02/-1 STP210NF02 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A 120 A 300 W 300 W

Contextual Info: STL120NH02V N-CHANNEL 20V - 0.0025Ω - 120A PowerFLAT 6X5 STripFET™ III MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STL120NH02V • ■ ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 20 V < 0.003 Ω 28 A (2) TYPICAL RDS(on) = 0.0025 Ω @ 4.5V

STB210NF02

Abstract: STB210NF02-1 STB210NF02T4 STP210NF02 p210n B210NF02
Contextual Info: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB210NF02/-1 STP210NF02 • ■ ■ VDSS RDS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0026Ω

Contextual Info: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D PAK/I PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE V DSS R DS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) STB210NF02/-1 STP210NF02 • ■ ■ TYPICAL RDS(on) = 0.0026Ω

IRL5602S

Contextual Info: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

*l5602s

Abstract: IRL5602S
Contextual Info: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

Contextual Info: PD- 95099 IRL5602SPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS on = 0.042Ω G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

Contextual Info: PD- 95099 IRL5602SPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS on = 0.042Ω G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

alternator diode 35a 9

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Powertrain Management „ Typ Qg(10) = 215nC at VGS = 10V „ Solenoid and Motor Drivers „ Low Miller Charge „ Electronic Steering „ Low Qrr Body Diode

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications ̈ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A ̈ Powertrain Management ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Solenoid and Motor Drivers ̈ Low Miller Charge ̈ Electronic Steering

FDB8441

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

Mosfet

Abstract: SSPL7508
Contextual Info: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and

p-channel Mosfet 110A

Abstract: UTT120P06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also

UT120

Abstract: 54NC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT120N03 Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120N04 Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed.

Contextual Info: IR L R /U 120A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 4^ ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

STP100NF04

Abstract: STB100NF04-1
Contextual Info: STP100NF04 STB100NF04-1 N-CHANNEL 40V - 0.0043Ω - 120A TO-220/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE STP100NF04 STB100NF04-1 • ■ ■ VDSS RDS on ID 40 V 40 V < 0.0046 Ω < 0.0046 Ω 120 A 120 A TYPICAL RDS(on) = 0.0043Ω STANDARD THRESHOLD DRIVE

FDP053N08B

Contextual Info: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

AN-994

Abstract: IRF1405ZS-7P
Contextual Info: PD - 96905 AUTOMOTIVE MOSFET IRF1405ZS-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 4.9mΩ‰ G ID = 120A

Mosfet 75V 120A

Abstract: FDH055N15A MOSFET 20V 120A Power Mosfet 75V 120A
Contextual Info: FDH055N15A N-Channel PowerTrench MOSFET 150V, 167A, 5.9mΩ Features Description • RDS on = 4.8mΩ ( Typ.)@ VGS = 10V, ID = 120A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced

Contextual Info: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced