MOSFET 2302 Search Results

ufn720

Abstract: UFN723 UFN721 15AQ
Contextual Info: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as

Contextual Info: AF2302N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Capable of 2.5V Gate Drive - Small Package Outline - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, low

FMS2302

Abstract: SOT-23 Marking 2302 POWER MOSFET P1 smd marking code
Contextual Info: Formosa MS SMD MOSFET FMS2302 List List. 1 Package outline. 2 Features. 2

SOT-23 Marking 2302

Abstract: mosfet 20v 30A MOSFET 2302 2302 SOT-23
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2302 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

A1 sot23 n-channel

Abstract: SG5848 AF2302N marking code YW DIODE
Contextual Info: AF2302N 20V N-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = 20V

SOT23 marking 6A

Abstract: SG5848 AF2302N OCT-12-2004
Contextual Info: AF2302N 20V N-Channel Enhancement Mode MOSFET „ Features „ Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package

mosfet te 2304

Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts

Mosfet

Abstract: SSF2302
Contextual Info: SSF2302 20V N-Channel MOSFET D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

MTN2302N3

Abstract: 2302 SOT-23 SOT-23 Marking 2302
Contextual Info: CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date :2008.10.17 Page No. : 1/7 20V N-CHANNEL Enhancement Mode MOSFET MTN2302N3 Features • VDS=20V RDS ON =85mΩ(max.)@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A

WTC2302

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

WTC2302

Abstract: WTC2304
Contextual Info: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERS P b Lead Pb -Free DRAIN SOUCE VOLTAGE 25 VOLTAGE 1 GATE Features: 2 SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable 1 2 SOT-23

WTC2302

Abstract: 2302 SOT-23 SOT-23 Marking 2302
Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

Contextual Info: interrii HIP6021 F e b r u a r y 1999 Advanced PWM and Triple Linear Power Controller The HIP6021 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC integrates a voltage-mode PWM controller and three linear

schematic diagram electrical BIKES USING DC MOTOR

Abstract: schematic diagram of laptop inverter wheelchair joystick circuit wheelchair motor 24v 24V dc motor of a wheel chair axial-flux schematic diagram UPS 3 phase inverter circuit diagram of battery operated wheelchair wheelchair circuit wheelchair
Contextual Info: AN1506 APPLICATION NOTE A MOTOR DRIVES SYSTEM FOR WHEELCHAIR APPLICATIONS G. Belverde - C. Guastella - M. Melito - A. Raciti 1. ABSTRACT This paper deals with a new concept applied in designing low-voltage power MOSFETs that are suitable for high-current low-voltage converter applications. The layout of the proposed device family overcomes

J-STD-005

Abstract: MARK RAY QFN
Contextual Info: Complete High Efficiency DC/DC Power Module ISL8204M, ISL8206M The ISL8204M, ISL8206M is a family of pin-compatible power modules to the ISL8201M. These are simple and easy to use, high power DC/DC modules and are ideal for a wide variety of applications. The ISL820xM family of high current DC/DC

J-STD-005

Abstract: ISL8204M 230-245C 12v 6A variable convertor diagram ISL8206 ISL820xM AN1386 ISL8201M ISL8204MIRZ ISL8206M
Contextual Info: ISL8204M, ISL8206M The ISL8204M, ISL8206M is a family of pin-compatible power modules to the ISL8201M. These are simple and easy to use, high power DC\DC modules and are ideal for a wide variety of applications. The ISL820xM family of high current DC\DC step-down modules virtually

Contextual Info: Complete High Efficiency DC/DC Power Module The ISL8204M, ISL8206M is a family of pin-compatible power modules to the ISL8201M. These are simple and easy to use, high power DC/DC modules and are ideal for a wide variety of applications. The ISL820xM family of high current DC/DC

ELM605DA

Contextual Info: ELM605DA 2A synchronous step-down DC/DC converter •General description ELM605DA is low-input voltage and high-output current synchronous-buck PWM converter and integrates with all required active components. Its' operating input voltage ranges from 2.5V to 6V and output voltage

Contextual Info: ELM605DA 2A synchronous step-down DC/DC converter •General description ELM605DA is low-input voltage and high-output current synchronous-buck PWM converter and integrates with all required active components. Its' operating input voltage ranges from 2.5V to 6V and output voltage

MOSFET 2302

Abstract: ALD2302 ALD2302A ALD4302 LM193
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of

Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of

ALD2302

Abstract: ALD2302A ALD2302ADA ALD2302ASA ALD2302DA ALD4302 LM193 mosfet protection circuit diagram
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD2302A/ALD2302 DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER GENERAL DESCRIPTION FEATURES The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology. The primary features are: very high typical input impedance of