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    MOSFET 2SK Search Results

    MOSFET 2SK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2SK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power mosfet

    Abstract: mosfet "Power MOSFET" POWER MOSFET DATA BOOK to220fp mosfet equivalent 2SK3130 TO-220FP mosfet Application Notes MOSFET DATA BOOK
    Text: 2SK3130 Power MOSFET GENERAL DESCRIPTION FEATURES Page 1 2SK3130 Power MOSFET ABSOLUTE MAXIMUM RATIGS Page 2 2SK3130 Power MOSFET ELECTRICAL CHARACTERISTICS o Unless otherwise specified,TJ=25 C. Page 3 2SK3130 Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS


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    PDF 2SK3130 O-220FP power mosfet mosfet "Power MOSFET" POWER MOSFET DATA BOOK to220fp mosfet equivalent 2SK3130 TO-220FP mosfet Application Notes MOSFET DATA BOOK

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    2sk3271

    Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
    Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters


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    PDF 2SK3271-01 2sk3271 MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874

    POWER MOSFET

    Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
    Text: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


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    PDF 2SK3270-01 O-220AB -51MHz POWER MOSFET power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET

    POWER MOSFET

    Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
    Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters


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    PDF 2SK3273-01MR O-220F POWER MOSFET mosfet power amplifier 2SK3273-01MR mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: 2SK3518-01MR FUJI POWER MOSFET 2SK3518-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features 1 10 Applications o Zth ch-c [ C/W] 10 -1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 10


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    PDF 2SK3518-01MR O-220F

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


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    PDF UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC

    MOSFET TOSHIBA 2SK

    Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


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    transistor 2sk

    Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


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    Untitled

    Abstract: No abstract text available
    Text: 2SK3501-01 FUJI POWER MOSFET 2SK3501-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Transient Thermal Impedance Zth ch-c =f(t):D=t/T TO-220AB Features 1 10 High speed switching Low on-resistance No secondary breadown


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    PDF 2SK3501-01 O-220AB

    3PD200

    Abstract: 2SK3019 UK3019 UK3019L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION The UTC 2SK3019 is a Silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


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    PDF UK3019 2SK3019 OT-23 400mA UK3019L UK3019G UK3019-AE3-R QW-R502-311 3PD200 UK3019 UK3019L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: 2SK3519-01 FUJI POWER MOSFET 2SK3519-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 1 10 D=0.5 o Zth ch-c [ C/W] 10 0.2


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    PDF 2SK3519-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified


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    PDF 2SK3523-01R MT5F11620

    Untitled

    Abstract: No abstract text available
    Text: 2SK3524-01 FUJI POWER MOSFET 2SK3524-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings 10 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof D=0.5 0.2 0.1 o Zth ch-c [ C/W]


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    PDF 2SK3524-01 O-220AB

    2SK3520-01MR

    Abstract: No abstract text available
    Text: 2SK3520-01MR FUJI POWER MOSFET 2SK3520-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings 10 1 10 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof D=0.5 0.2 0.1 0.05 o Zth ch-c [ C/W]


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    PDF 2SK3520-01MR O-220F 2SK3520-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET


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    PDF 2SK3535-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3517-01 FUJI POWER MOSFET 2SK3517-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings o Zth ch-c [ C/W] 10 1 10 TO-220AB Features Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 High speed switching Low on-resistance


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    PDF 2SK3517-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3504-01 FUJI POWER MOSFET 2SK3504-01 FUJI POWER MOSFET Super FAP-G Series Zth ch-c [K/W] 10 10 Outline Drawings Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 1 N-CHANNEL SILICON POWER MOSFET TO-220AB Features High speed switching Low on-resistance


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    PDF 2SK3504-01 O-220AB

    D1781

    Abstract: 2SK1588 TC-2352A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not


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    PDF 2SK1588 2SK1588 D1781 TC-2352A

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


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    PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    marking g20

    Abstract: 2SK1658
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for


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    PDF 2SK1658 2SK1658 SC-70 marking g20

    d1780

    Abstract: 2SK1657 TC236
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which 2.8 ±0.2 0.4 +0.1 –0.05 can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for


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    PDF 2SK1657 2SK1657 SC-59 d1780 TC236

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    2SK1946-01MR

    Abstract: 2SK1946 ON60
    Text: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers


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    PDF 2SK1946-01MR O-220F15 SC-67 2SK1946-01MR 2SK1946 ON60