MOSFET 30A 200V Search Results

Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

30NF20

Abstract: mosfet 30a 200v TO247 package dissipation 30NF20 st JESD97 STB30NF20 STP30NF20 STW30NF20
Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

30NF20

Abstract: STP30NF20 JESD97 STB30NF20 STW30NF20
Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

30NF20

Abstract: JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • ■ Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ) s ( ct

30NF20

Abstract: STP30NF20 STW30NF20 JESD97
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested

200V AUTOMOTIVE MOSFET

Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■

NA 061

Abstract: STP30NF20 STP30 200V AUTOMOTIVE MOSFET 30NF20 mosfet 30a 200v JESD97 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■

STW30N20

Abstract: W30N20
Contextual Info: STP30N20 STW30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W STW30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic

12v 30A regulator

Abstract: P-channel 200V 30A mosfet IRHMS593260 IRHMS597260 L-073 PD946
Contextual Info: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

Contextual Info: PD-94605D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

Contextual Info: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

rcx300n20

Contextual Info: RCX300N20 RCX300N20 Datasheet Nch 200V 30A Power MOSFET lOutline VDSS 200V RDS on (Max.) 80mW ID 30A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ300N20 Datasheet Nch 200V 30A Power MOSFET lOutline VDSS 200V RDS on (Max.) 80mW ID 30A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

12V 30A diode

Abstract: AS025
Contextual Info: PD-94605C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597260 100K Rads (Si) 0.103Ω IRHMS593260 300K Rads (Si) 0.103Ω ID -30A -30A International Rectifier’s R5TM technology provides

Contextual Info: RCJ300N20 Nch 200V 30A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 80mW ID 30A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: RCX300N20 Datasheet Nch 200V 30A Power MOSFET lOutline VDSS 200V RDS on (Max.) 80mW ID 30A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

RCX300N20

Contextual Info: RCX300N20 Nch 200V 30A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 80mW ID 30A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.

4134 mosfet

Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
Contextual Info: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.

STP30NM30N

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

P30NM30N

Abstract: STP30NM30N JESD97
Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

Mosfet

Abstract: SSPL2090
Contextual Info: SSPL2090 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 80mΩ(typ.) ID 30A TO-220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and