MOSFET 338 Search Results
MOSFET 338 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 338 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features Description • RDS on = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDA24N50 | |
Contextual Info: FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 mΩ Features Description • RDS on = 34 mΩ (Typ.) @ VGS = 10 V, ID = 30.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDP61N20 | |
fdp61n20
Abstract: *61n20
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FDP61N20 FDP61N20 *61n20 | |
FDA24N50Contextual Info: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 m Features Description • RDS on = 160 m (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDA24N50 FDA24N50 | |
Contextual Info: SENSITRON SEMICONDUCTOR SHD219451 TECHNICAL DATA DATA SHEET 338, REV B HERMETIC POWER MOSFET P-CHANNEL FEATURES: 55 Volt, 0.02, Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. |
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SHD219451 SHD219451 | |
SHD219451Contextual Info: SENSITRON SEMICONDUCTOR SHD219451 TECHNICAL DATA DATA SHEET 338, REV B HERMETIC POWER MOSFET P-CHANNEL FEATURES: 55 Volt, 0.02, Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. |
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SHD219451 SHD219451 | |
SHD219451Contextual Info: SHD219451 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 338, REV C HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 55 Volt, 0.024, Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. |
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SHD219451 SHD219451 | |
Contextual Info: Freescale Semiconductor Advance Information Document order number: MC33816 Rev. 2.0, 11/2012 Automotive Engine Control IC with Smart Gate Control The 33816 is a 12 channel gate driver IC for automotive engine control applications. The IC consist of five external MOSFET high side predrivers and seven external MOSFET low side pre-drivers. The 33816 |
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MC33816 STR0326182960 | |
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33816 Rev. 3.0, 12/2013 SD6 Programmable Solenoid Controller for Precision Automotive Solenoid Control Applications The 33816 is a twelve gate driver IC for precision solenoid control applications. The IC consists of five external MOSFET high-side predrivers and seven external MOSFET low-side pre-drivers. The 33816 |
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MC33816 | |
eft 317 transistor
Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
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NUD3105 NUD3112 NUD3124 IEC61000-4-4 SGD525-0 SGD525/D eft 317 transistor NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 MDC3105D NUD3105 Distributors and Sales Partners | |
FDN338P
Abstract: 187M
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FDN338P FDN338P 187M | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1518T1 AN215A, | |
AAT4601
Abstract: AAT4602 AAT4610 AAT4610A AAT4610IGV-T1 AAT4620 AAT4625 AAT4626
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AAT4610 OT-23 AAT4610 AAT4610A AAT4601 AAT4602 AAT4610A AAT4610IGV-T1 AAT4620 AAT4625 AAT4626 | |
AAT4601
Abstract: AAT4602 AAT4610 AAT4610A AAT4610IGV-T1 AAT4620 AAT4625 AAT4626 AAT4610IGV "Pin for Pin"
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AAT4610 OT-23 AAT4610 AAT4610A AAT4601 AAT4602 AAT4610A AAT4610IGV-T1 AAT4620 AAT4625 AAT4626 AAT4610IGV "Pin for Pin" | |
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marking code 604 SOT23
Abstract: AAT4601 AAT4602 AAT4611 AAT4611IGV-1-T1 AAT4611IGV-T1 AAT4620 AAT4625 AAT4626 analogictech sot
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AAT4611 OT-23 AAT4611 marking code 604 SOT23 AAT4601 AAT4602 AAT4611IGV-1-T1 AAT4611IGV-T1 AAT4620 AAT4625 AAT4626 analogictech sot | |
AAT4601
Abstract: AAT4602 AAT4610 AAT4610IGV-1-T1 AAT4610IGV-T1 AAT4620 AAT4625 AAT4626 A2 SOT-23 mosfet MARKING KV SOT-23
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AAT4610 OT-23 AAT4610 AAT4610IGV-T1 AAT4610IGV-1-T1 OT-23-5 AAT4601 AAT4602 AAT4610IGV-1-T1 AAT4610IGV-T1 AAT4620 AAT4625 AAT4626 A2 SOT-23 mosfet MARKING KV SOT-23 | |
AAT4608
Abstract: AAT4608IGV-T1
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AAT4608 AAT4608 AAT4608IGV-T1 | |
AAT4601
Abstract: AAT4602 AAT4611 AAT4620 AAT4625 AAT4626 SC70JW-8 A2 SOT-23 mosfet 0880A MARKING 313 SOT23-5
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AAT4611 OT-23 AAT4611 OT-23-5 AAT4611IGV-T1 AAT4611IGV-1-T1 AAT4601 AAT4602 AAT4620 AAT4625 AAT4626 SC70JW-8 A2 SOT-23 mosfet 0880A MARKING 313 SOT23-5 | |
AAT4615
Abstract: AAT4615ITP-T1
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AAT4615 AAT4615 AAT4615ITP-T1 | |
IR3551
Abstract: IR3550 DIODE SMD 44w 3551M GPU board diagram 210nH Waveform Clipping With Schottky "synchronous diode" SMD 1206 R1-10k MOSFET current sense amplifier
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IR3550 IR3553 IR3551 IR3551 3551M DIODE SMD 44w 3551M GPU board diagram 210nH Waveform Clipping With Schottky "synchronous diode" SMD 1206 R1-10k MOSFET current sense amplifier | |
Contextual Info: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling |
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FCA36N60NF FCA36N60NF | |
125OC
Abstract: FDC6332L SUPERSOT - 3
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FDC6332L 125OC FDC6332L SUPERSOT - 3 | |
IR3550Contextual Info: 60A Integrated PowIRstage FEATURES IR3550 DESCRIPTION • Peak efficiency up to 95% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V |
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IR3550 IR3550 3550M | |
DIODE SMD 44wContextual Info: 50A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.5% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V |
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IR3550 IR3553 IR3551 IR3551 3551M DIODE SMD 44w |