MOSFET 400 MHZ PHILIPS Search Results

transistor 341 20P

Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

00941

Abstract: BF1205
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

BF1203

Abstract: FET MARKING CODE 8203 dual mosfet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

9033 transistor

Abstract: BF1203
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203

BF1203

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

philips power mosfet

Abstract: km 1667 BF1204
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

MARKING 5F SOT363

Abstract: BF1204 FET MARKING CODE km 1667
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204

BB405

Abstract: BF998WR 4814 mosfet dual-gate MGC480
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR

Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

"MARKING CODE MF"

Abstract: marking ggc BF1100WR marking code mf dual-gate
Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

marking code mf

Abstract: dual-gate FET MARKING CODE BF1100WR mosfet handbook fw 2602
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage

PMEG2020EA

Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator

Contextual Info: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

PHILIPS MOSFET MARKING

Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.

Contextual Info: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PINNING FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high

BF909AWR

Abstract: 302B ha3020 dual-gate k 3531 transistor transistor 1G1
Contextual Info: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909AWR FEATURES PINNING • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Dual-Gate Mosfet

Abstract: MRC280 FET MARKING CODE BF908WR PHILIPS MOSFET MARKING depletion p mosfet code md dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR

5BS transistor

Contextual Info: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

BF908WR

Abstract: cifa dual-gate
Contextual Info: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET FEATURES BF908WR PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

BF904WR

Abstract: Dual-Gate Mosfet 731 MOSFET transistor t220 dual-gate mosfet 352 TRANSISTOR MOSFET K 1249 MLD150
Contextual Info: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PINNING FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

mosfet K 2865

Abstract: 4814 mosfet BF909WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR