MOSFET 400A Search Results

N mosfet 250v 600A

Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Contextual Info: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?

N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •

FCA50CC50

Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

200V 200A mosfet

Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
Contextual Info: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other

AN1001

Abstract: AN-994 TO-262 Package
Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

IRFB52N15D

Abstract: AN1001 IRF1010 IRF530S IRFS52N15D IRFSL52N15D
Contextual Info: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

100A 1000V mosfet

Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

AN1001

Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D ir 119 e
Contextual Info: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

AN1001

Abstract: AN-994 IRFB52N15
Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

AN1001

Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D
Contextual Info: PD - 94357 IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRLR2908

Abstract: IRLU2908 IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AN-994

Abstract: EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRLR2908

Abstract: IRLU2908 IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRLR2908

Abstract: IRLU2908
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91779A IRHM7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET

IRLR2908

Abstract: IRLU2908 MOSFET IRF 380
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

IRHM7250SE

Contextual Info: PD - 91779A IRHM7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHM7450SE

Abstract: 400V to 12V DC Regulator
Contextual Info: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

D30NF03LT

Abstract: JESD97 STD30NF03LT STD30NF03LTT4 D30NF
Contextual Info: STD30NF03LT N-channel 30V - 0.017Ω - 30A - DPAK STripFET II Power MOSFET General features • Type VDSS RDS on ID STD30NF03LT 30V < 0.025Ω 30A Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

Contextual Info: PD - 91778A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7250SE 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET