MOSFET 400V 16A Search Results

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

3n40

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRF360

Abstract: IRF3601 mosfet irf360
Contextual Info: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

IRF350LC

Abstract: IRFP350LC IRFPE30
Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

IRFP350

Contextual Info: PD-9.445C International Ik?r1Rectifier IRFP350 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n -

diode marking dmx

Abstract: forward smps 12v
Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

IRF 640 mosfet

Abstract: IRFP17N50L
Contextual Info: APPROVED IRFP17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits

Contextual Info: SSFP17N50 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID25 = 16A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Contextual Info: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications

035H

Abstract: IRFPE30
Contextual Info: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications

FDP16N50

Abstract: FDPF16N50
Contextual Info: UniFET TM FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF16N50

Abstract: FDP16N50
Contextual Info: UniFET TM FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

Contextual Info: UniFET FDP16N50 / FDPF16N50 / FDPF16N50T TM 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

zvs flyback driver

Abstract: APT15F60B APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

400v 20 amp mosfet

Abstract: APT6032HLL
Contextual Info: APT6032HLL 600V 16A 0.320Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: AP16N50I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic 500V RDS ON 0.4 ID G RoHS Compliant & Halogen-Free BVDSS 16A S Description

FS7VS-16A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS7VS-16A HIGH-SPEED SWITCHING USE FS7VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

FS14SM-16A

Abstract: mosfet 600V 16A FS14SM16A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

FS3SM-16A

Abstract: MOSFET 800V 3A MOSFET 800V 15A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS3SM-16A HIGH-SPEED SWITCHING USE FS3SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V