MOSFET 42 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: FQP46N15 N-Channel QFET MOSFET 150 V, 45.6 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

international rectifier

Abstract: IRFM260 4.5v to 100v input regulator
Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

SMD1P

Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
Contextual Info: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

IRF*260

Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Features Description • 50 A, 150 V, RDS on = 42 mΩ (Max) @VGS = 10 V, ID = 25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

IRFM360

Contextual Info: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

96364

Contextual Info: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

IRFN054

Contextual Info: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338

Contextual Info: MIC4420/4429/429 6A-Peak Low-Side MOSFET Driver ' ' ' - — - Bipolar/CMOS/DMOS Process General Description Features MIC4420, MIC4429 and MIC429 MOSFET drivers are tough, efficient, and easy to use. The MIC4429 and MIC429

lm2725

Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
Contextual Info: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

5962-8850301PA

Abstract: 5962-88503012C TSC426 5962-88503032C CQCC1-N20 5962-8850302PA
Contextual Info: SCOPE: DUAL POWER MOSFET DRIVER Device Type 01 02 03 Generic Number TSC426M x /883B TSC427M(x)/883B TSC428M(x)/883B Circuit Function Dual Power Inverting MOSFET Driver Dual Power Noninverting MOSFET Driver Dual Power Inverting/Noninverting MOSFET Driver Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

t 3866 mosfet

Contextual Info: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

TC227

Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

CPH5802

Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)

5310

Abstract: alternator rectifier marking code 82A IRF3808
Contextual Info: PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

94291B

Abstract: IRF3808 marking code 82A Controlled Alternator Voltage Regulator alternator voltage regulator LIN
Contextual Info: PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

P-Channel mosfet 400v

Abstract: IRF7101
Contextual Info: PD - 95296 IRF7317PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET

mch3412

Abstract: ta3173 DIODE MARKING 3173 TA-317
Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)