MOSFET 4405 Search Results
MOSFET 4405 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 4405 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RA30H4452M
Abstract: RA30H4452M-01 RA30H4452M-E01
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RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-01 RA30H4452M-E01 | |
hatfield attenuator
Abstract: MITSUBISHI RF module RF MOSFET MODULE RF MOSFET MODULE RA45H4452M RA45H4452M RA45H4452M-01 RA45H4452M-E01 circuit diagram power amplifier 450w d408
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RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RF MOSFET MODULE RA45H4452M RA45H4452M-01 RA45H4452M-E01 circuit diagram power amplifier 450w d408 | |
F480M
Abstract: rf mosfet power amplifier
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RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz F480M rf mosfet power amplifier | |
RA13H4452M-01
Abstract: hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M RA13H4452M-E01 RF POWER amplifier 10 watt
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RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01 hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M-E01 RF POWER amplifier 10 watt | |
300 watt mosfet amplifier
Abstract: RA30H4452M RA30H4452M-101
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RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz 300 watt mosfet amplifier RA30H4452M-101 | |
hatfield attenuator
Abstract: 7H4452M 4 channel rf module RF MOSFET MODULE RA07H4452M RA07H4452M-01 RA07H4452M-E01
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RA07H4452M 440-520MHz RA07H4452M 520-MHz hatfield attenuator 7H4452M 4 channel rf module RF MOSFET MODULE RA07H4452M-01 RA07H4452M-E01 | |
RA30H4452M
Abstract: RA30H4452M-101
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RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101 | |
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Contextual Info: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
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FDMC8010 | |
4405 mosfetContextual Info: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
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FDMC8010 FDMC8010 4405 mosfet | |
RA13H4452M-01
Abstract: RA13H4452M
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RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01 | |
RA45H4452M
Abstract: RA45H4452M-01
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RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-01 | |
D408
Abstract: 4854 RA07N4452M RA07N4452M-01 RA07N4452M-E01
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RA07N4452M 440-520MHz RA07N4452M 520-MHz D408 4854 RA07N4452M-01 RA07N4452M-E01 | |
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Contextual Info: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
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FDMC8010 | |
RA07N4452M
Abstract: RA07N4452M-01
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RA07N4452M 440-520MHz RA07N4452M 520-MHz RA07N4452M-01 | |
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ra55H4452
Abstract: RF MOSFET MODULE mosfet 440 mhz
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RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz ra55H4452 RF MOSFET MODULE mosfet 440 mhz | |
RF MOSFET MODULE RA45H4452M
Abstract: RF MOSFET MODULE RA45H4452M RA45H4452M-101
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RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RF MOSFET MODULE RA45H4452M RF MOSFET MODULE RA45H4452M-101 | |
metwnContextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 440- to |
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RA07H4452M 440-520MHz RA07H4452M 520-MHz nomina3-1-55685-739 I-20041 metwn | |
RA55H4452MContextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to |
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RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz | |
RA07N4452M
Abstract: RF MOSFET MODULE RA07N4452
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RA07N4452M 440-520MHz RA07N4452M 520-MHz RF MOSFET MODULE RA07N4452 | |
RA07M4452MSA
Abstract: RA07M
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RA07M4452MSA 440-520MHz RA07M4452MSA 520-MHz RA07M | |
RA07H4452M
Abstract: RA07H4452M-01
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RA07H4452M 440-520MHz RA07H4452M 520-MHz RA07H4452M-01 | |
RD 15 mitsubishi
Abstract: hatfield attenuator MITSUBISHI RF module RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RA07M4452M-01 RA07M4452M-E01 RA07M4452M RA07M
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RA07M4452M 440-520MHz RA07M4452M 520-MHz ava86-2-2833-9793 RD 15 mitsubishi hatfield attenuator MITSUBISHI RF module RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RA07M4452M-01 RA07M4452M-E01 RA07M | |
LT 7210
Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
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RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz LT 7210 lt 7210 datasheet 440M 470M RA60H4452M1-101 | |
RA45H4452M
Abstract: RA45H4452M-101 transistor marking zg
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RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-101 transistor marking zg | |