Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 4927N Search Results

    MOSFET 4927N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4927N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4927N

    Abstract: mosfet 4927n NTMFS4927N NTMFS4927NT1G
    Contextual Info: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original
    NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n NTMFS4927N NTMFS4927NT1G PDF

    4927N

    Abstract: mosfet 4927n NTMFS4927N
    Contextual Info: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original
    NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n PDF

    4927n

    Abstract: mosfet 4927n
    Contextual Info: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original
    NTMFS4927N NTMFS4927N/D 4927n mosfet 4927n PDF

    4927N

    Abstract: mosfet 4927n NTMFS4927NC ntmfs4927 NTMFS4927NT3G
    Contextual Info: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original
    NTMFS4927N, NTMFS4927NC NTMFS4927N/D 4927N mosfet 4927n ntmfs4927 NTMFS4927NT3G PDF

    Contextual Info: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original
    NTMFS4927N, NTMFS4927NC NTMFS4927N/D PDF

    mosfet 4927n

    Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS
    Contextual Info: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTMFS4927N NTMFS4927N/D mosfet 4927n 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS PDF