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    MOSFET 500A Search Results

    MOSFET 500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 500A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    IRF7820

    Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
    Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF7820PbF 155mH, IRF7820 N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6 PDF

    Contextual Info: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF7836PbF EIA-481 EIA-541. PDF

    IRF7836PBF

    Contextual Info: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF7836PbF EIA-481 EIA-541. IRF7836PBF PDF

    Contextual Info: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    6013A IRF7832ZPbF EIA-481 EIA-541. PDF

    IRF7832Z

    Abstract: MOSFET NOTEBOOK
    Contextual Info: PD - 96975A IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    6975A IRF7832Z EIA-481 EIA-541. IRF7832Z MOSFET NOTEBOOK PDF

    EIA-541

    Contextual Info: PD - 96082A IRF7832ZUPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and


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    6082A IRF7832ZUPbF EIA-481 EIA-541. EIA-541 PDF

    Contextual Info: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    6013A IRF7832ZPbF EIA-481 EIA-541. PDF

    EIA-541

    Abstract: 96076
    Contextual Info: PD - 96076A IRF7836UPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche


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    6076A IRF7836UPbF EIA-481 EIA-541. EIA-541 96076 PDF

    Contextual Info: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS


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    IRF7832ZPbF EIA-481 EIA-541. PDF

    Contextual Info: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS


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    6013A IRF7832ZPbF EIA-481 EIA-541. PDF

    Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 200V 78m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 10V VGS


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    IRF7820PbF 155mH, PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7422-H Preliminary Power MOSFET 40A, 30V N-CHANNEL MOSFET  DESCRIPTION The UTC UT7422-H is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UT7422-H is suitable for load switch and battery


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    UT7422-H UT7422-H UT7422G-K08-3030-R QW-R502-B36 PDF

    Contextual Info: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


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    IRF7832Z EIA-481 EIA-541. PDF

    AON7426

    Abstract: 20A2
    Contextual Info: AON7426 30V N-Channel MOSFET General Description Product Summary The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AON7426 AON7426 20A2 PDF

    AON7424

    Contextual Info: AON7424 30V N-Channel MOSFET General Description Product Summary The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AON7424 AON7424 PDF

    Contextual Info: AON7422E 30V N-Channel MOSFET General Description Product Summary The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AON7422E AON7422E PDF

    AON6400L

    Abstract: AON6400
    Contextual Info: AON6400L 30V N-Channel MOSFET General Description Product Summary The AON6400L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AON6400L AON6400L CharactON6400L AON6400 PDF

    Contextual Info: AON6202 30V N-Channel MOSFET General Description Product Summary The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


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    AON6202 AON6202 PDF

    AO4588

    Contextual Info: AO4588 30V N-Channel MOSFET General Description Product Summary The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AO4588 AO4588 PDF

    Contextual Info: AON6242 60V N-Channel MOSFET General Description Product Summary The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


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    AON6242 AON6242 PDF

    Contextual Info: AON6400 30V N-Channel MOSFET General Description Product Summary The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    AON6400 AON6400 PDF

    Contextual Info: AON6240 40V N-Channel MOSFET General Description Product Summary The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


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    AON6240 AON6240 PDF