MOSFET 500V 3A Search Results

FSS430

Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70

D4NK5

Abstract: D4NK50ZD P4NK50ZD P4NK50Z D4NK50Z F4NK50ZD STD4NK50ZD STD4NK50ZD-1 STF4NK50ZD STP4NK50ZD
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W

D4NK5

Abstract: P4NK50ZD D4NK50ZD-1 d4nk50zd F4NK50ZD F 25.1 A zener diode D4NK P4NK50Z D4NK50Z *D4NK5
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-CHANNEL 500V - 2.4Ω - 3A - TO-220 /FP- DPAK - IPAK Fast Diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W STF4NK50ZD

D4NK5

Abstract: P4NK50Z
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W

Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

diode circuit diagram

Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STD3NM50

Abstract: STD3NM50-1
Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

2E12

Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

p12nm50

Abstract: STB12NM50FD STB12NM50FD-1 STP12NM50FD STP12NM50FDFP STW14NM50FD
Contextual Info: STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STB12NM50FD 500V <0.4Ω 12A 160W STB12NM50FD-1 500V <0.4Ω

p12nm50

Abstract: B12NM50 w14nm50 STB12NM50FD STB12NM50FD-1 STP12NM50FD STP12NM50FDFP STW14NM50FD 0118C
Contextual Info: STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STB12NM50FD 500V <0.4Ω 12A 160W STB12NM50FD-1 500V <0.4Ω

Contextual Info: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

VIVA

Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: 3E12 FRS430D FRS430H FRS430R 794V
Contextual Info: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRM430D FRM430H FRM430R
Contextual Info: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM50 500V < 2.8 Ω 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50K-MK Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

AOT3N50

Abstract: AOTF3N50
Contextual Info: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Features The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

dioda BY 235

Abstract: DIODA SS 14
Contextual Info: IR FR /U 420A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ By* = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ Vos = 500V

FDD6N50

Contextual Info: FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

FDD6N50

Contextual Info: FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

AOT3N50

Abstract: AOTF3N50
Contextual Info: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.