MOSFET 500V 45A Search Results

MOSFET 500V 45A Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

MOSFET 500V 45A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDH45N50F Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDH45N50F O-247This FDH45N50F	PDF
FDH45N50F Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDH45N50F O-247 FDH45N50F	PDF
F133 Abstract: FDH45N50F Contextual Info: UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDH45N50F F133	PDF
Contextual Info: UniFET TM FDH45N50F_F133 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDH45N50F	PDF
w45nm50fd Abstract: of w45nm50fd STW45NM50FD W45NM50 JESD97 ZVS phase-shift converters Contextual Info: STW45NM50FD N-channel 500V - 0.07Ω - 45A - TO247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STW45NM50FD 500V <0.1Ω 45A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge	Original	STW45NM50FD O-247 w45nm50fd of w45nm50fd STW45NM50FD W45NM50 JESD97 ZVS phase-shift converters	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE	Original	STW45NM50 O-247 STW45NM50	PDF
STW45NM50FD Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED	Original	STW45NM50FD O-247 STW45NM50FD	PDF
STW45NM50 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE	Original	STW45NM50 O-247 STW45NM50	PDF
STW45NM50 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247 STW45NM50	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	O-247 STW45NM50 O-247	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247	PDF
ZVS phase-shift converters Abstract: STW45NM50FD Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED	Original	O-247 STW45NM50FD O-247 ZVS phase-shift converters STW45NM50FD	PDF
STW45NM50 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247 STW45NM50	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247	PDF

W45NM50FD Abstract: of w45nm50fd w45nm50f STW45NM50FD W45NM50 ZVS phase-shift converters Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh MOSFET With FAST DIODE Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STW45NM50FD 500V < 0.1Ω 45 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES	Original	STW45NM50FD O-247 O-247 W45NM50FD of w45nm50fd w45nm50f STW45NM50FD W45NM50 ZVS phase-shift converters	PDF
STW47NM50 Abstract: NC45A Contextual Info: STW47NM50 N-CHANNEL 500V - 0.065Ω - 45A TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)Qg ID STW47NM50 500V < 0.085Ω 5.6 ΩnC 45 A TYPICAL RDS(on) = 0.065Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW47NM50 O-247 STW47NM50 NC45A	PDF
STW45NM50 Abstract: N-channel MOSFET to-247 DSA003958 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.07Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V <0.09Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247 STW45NM50 N-channel MOSFET to-247 DSA003958	PDF
STW45NM50FD Abstract: ZVS phase-shift converters stw45nm50f Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50FD O-247 STW45NM50FD ZVS phase-shift converters stw45nm50f	PDF
STW45NM50 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE	Original	STW45NM50 O-247 STW45NM50	PDF
STW45NM50 Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE	Original	STW45NM50 O-247 STW45NM50	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50 O-247	PDF
Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE	Original	STW45NM50 O-247 O-247	PDF
ZVS phase-shift converters Abstract: STW45NM50FD Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	O-247 STW45NM50FD O-247 ZVS phase-shift converters STW45NM50FD	PDF
STW45NM50FD Abstract: zvs circuit schematic diagram ZVS phase-shift converters Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE	Original	STW45NM50FD O-247 STW45NM50FD zvs circuit schematic diagram ZVS phase-shift converters	PDF

MOSFET 500V 45A Search Results

MOSFET 500V 45A Result Highlights (5)

MOSFET 500V 45A Datasheets Context Search

FDH45N50F

FDH45N50F

F133

w45nm50fd

STW45NM50FD

STW45NM50

STW45NM50

ZVS phase-shift converters

STW45NM50

W45NM50FD

STW47NM50

STW45NM50

STW45NM50FD

STW45NM50

STW45NM50

ZVS phase-shift converters

STW45NM50FD