MOSFET 500V 4A Search Results

IPP50R280Ce

Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Contextual Info: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not

STB4NC50

Contextual Info: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STB4NC50

Contextual Info: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

TA17415

Abstract: BUZ42 TB334 TO 220AB Mosfet
Contextual Info: BUZ42 Semiconductor Data Sheet 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET October 1998 File Number 2417.1 Features • 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.000Ω (BUZ42 field effect transistor designed for applications such as

IRF820

Contextual Info: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220

IRF820

Abstract: JESD97 IRF8204
Contextual Info: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c

DIODE P840

Abstract: F840
Contextual Info: PJP840 / PJF840 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS ON =0.9Ω@VGS=10V, ID=4A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

mosfet 441

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-10 HIGH-SPEED SWITCHING USE FK14UM-10 • VDSS . 500V • rDS ON (MAX) .0.80Q •ID . 14A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N50 Preliminary Power MOSFET 4A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

SGS-Thomson mosfet ipak

Contextual Info: r z r "*1M s g s - ih o m s o n MGISQiLiCTMBOei STD1NB50 N - CHANNEL 500V - 7.5Q - 1 ,4A - IPAK PowerMESH MOSFET TYPE Voss RDS on Id STD1NB50 500V < 9 Î2 1.4 A . TYPICAL RDS(on) =7.5 Q EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

2E12

Abstract: 3E12 FRM440D FRM440H FRM440R
Contextual Info: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

6a 500v

Abstract: 2E12 3E12 FRM440D FRM440H FRM440R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

N-Channel mosfet 400v

Contextual Info: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

13N50

Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

44i2

Contextual Info: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2

STB8NC50

Contextual Info: STB8NC50 N-CHANNEL 500V - 0.7Ω - 8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB8NC50 500V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

FTP08N50

Abstract: ftp08n FTA08N50 n-channel 250V 80a power mosfet ARK Microelectronics
Contextual Info: FTP08N50/FTA08N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 0.9Ω 8.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

STB8NC50

Contextual Info: STB8NC50 N-CHANNEL 500V - 0.7Ω - 8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB8NC50 500V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX080N50 Datasheet Nch 500V 8A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

AOT8N50

Abstract: AOTF8N50
Contextual Info: AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Features The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t Applications b

13N50

Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can