MOSFET 50A 25V Search Results

D50NH

Abstract: D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02
Contextual Info: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark

STB55NF06

Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω

p40nf10

Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Contextual Info: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■

FDP2710

Contextual Info: FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ Features General Description „ Typ rDS on = 38mΩ at VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and

D50NH02L

Abstract: D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02
Contextual Info: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A 3 3 2 • Logic level device ■ RDS(ON) * Qg Industry’s benchmark

D40NF10

Abstract: D40NF
Contextual Info: STD40NF10 N-channel 100V - 0.025Ω - 50A - DPAK STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STD40NF10 100V < 0.028Ω 50A • 100% avalanche tested ■ Exceptional dv/dt capability 3 1 DPAK Description This Power MOSFET is the latest development of

Contextual Info: FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ Features General Description ̈ Typ rDS on = 38mΩ at VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and

SiR408DP-T1-GE3

Contextual Info: SiR408DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0063 at VGS = 10 V 50a 0.008 at VGS = 4.5 V 50a VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

k 2645 MOSFET

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

SiR892DP

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side MOSFET in Synchronous Buck dc-to-dc

STB55NF06

Contextual Info: STB55NF06 N-CHANNEL 60V - 0.018Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB55NF06 • ■ ■ ■ VDSS RDS on ID 60V <0.022Ω 50A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT

fairchild APPLICATION NOTE AN 9321

Contextual Info: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

Contextual Info: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

b50ne10

Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
Contextual Info: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

Contextual Info: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides

FDD13AN06A0

Abstract: TC217
Contextual Info: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management