MOSFET 600V 60A Search Results

Y60NM60

Abstract: STY60NM60 MAX247
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

mosfet 4430

Abstract: 4430 MOSFET 600v 60a STY60NM60
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

IRFAC30

Abstract: mosfet 600V 3.6A N-CHANNEL TO
Contextual Info: PD -90513 IRFAC30 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC30 BVDSS 600V RDS(on) 2.2Ω ID 3.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4

300V dc dc boost converter

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4

Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Infineon CoolMOS

Contextual Info: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg

APT56M60B2

Abstract: APT56M60L MIC4452
Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: SSF17N 60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA M ax @ VDS= 600V

Contextual Info: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 flow NPC 0 600V/60A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 65A parallel switch 60A IGBT and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout

Contextual Info: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg

Contextual Info: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 NPC Application flowNPC 0 600V/60A & 99mΩ PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V

APT94N60L2C3

Contextual Info: APT94N60L2C3 600V 94A 0.035Ω Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-264 Max Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

Contextual Info: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

Contextual Info: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

APT0406

Abstract: APT0501 APT0502
Contextual Info: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

APT0406

Abstract: APT0502
Contextual Info: APTC60DHM45T1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Asymmetrical bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • •

Contextual Info: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

APTC60HM70SCTG

Abstract: APT0406
Contextual Info: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies