b9nk60zd
Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W
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STB9NK60ZD
STF9NK60ZD
STP9NK60ZD
D2PAK/TO-220FP/TO-220
STF9NK60ZD
O-220FP
O-220
b9nk60zd
p9nk60z
N-Channel mosfet 600v 7A
P9NK60ZD
zener diode 3.0 b2
p9nk
MOSFET IGSS 100A
zener 600v
zener diode 15v
st 220 f1
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p7n60
Abstract: F7N60 m2828 n60p ga 132
Text: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP7N60
PJF7N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p7n60
F7N60
m2828
n60p
ga 132
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R6007ENJ
Abstract: No abstract text available
Text: R6007ENJ Nch 600V 7A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.620W ID 7A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6007ENJ
SC-83)
R1102A
R6007ENJ
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AOT7N60
Abstract: mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
AOTF7N60
AOT7N60
mosfet 600V 7A N-CHANNEL
AOT12N60
AOTF12N60
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SSF7N60A
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET SSF7N60A FEATURES BVDSS = 600V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 600V
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SSF7N60A
SSF7N60A
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Untitled
Abstract: No abstract text available
Text: R6007ENJ Nch 600V 7A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.620W ID 7A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6007ENJ
SC-83)
R1102A
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mosfet 600V 7A N-CHANNEL
Abstract: AOT4N60 AOT7N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
mosfet 600V 7A N-CHANNEL
AOT4N60
AOT7N60
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MOSFET 600V 7A
Abstract: BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
MOSFET 600V 7A
BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
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AOTF7N60L
Abstract: AOTF7N60 AOT7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
AOTF7N60L
AOT7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
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Untitled
Abstract: No abstract text available
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
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N-Channel mosfet 600v 7A
Abstract: mosfet 600V 7A N-CHANNEL BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
N-Channel mosfet 600v 7A
mosfet 600V 7A N-CHANNEL
BLV7N60
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mosfet 600V 7A N-CHANNEL
Abstract: BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
mosfet 600V 7A N-CHANNEL
BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD7N60/AOI7N60
AOD7N60
AOI7N60
O251A
AOI7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
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Untitled
Abstract: No abstract text available
Text: R6007ENX Nch 600V 7A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.620W ID 7A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6007ENX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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7A600V
Abstract: DB-186 195mH
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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O-220AB
DB-100
7A600V
DB-186
195mH
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Untitled
Abstract: No abstract text available
Text: R6007ENX Nch 600V 7A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.620W ID 7A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6007ENX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state
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O-220FP
DB-100
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE FK7VS-12 OUTLINE DRAWING I q J w e Q w r V d s s . 600V Id . 7A
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FK7VS-12
150ns
O-220S
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