MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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IRF7820
Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
Text: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF7820PbF
155mH,
IRF7820
N mosfet 100v 500A
20V P-Channel Power MOSFET 500A
dap6
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DS302
Abstract: IRFY140 SHD2262 SHD226402
Text: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.092 Ohm, 18A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY140 Series
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SHD226402
DS302,
SHD2262
IRFY140
DS302
SHD2262
SHD226402
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shd2262
Abstract: shd226402
Text: SENSITRON SEMICONDUCTOR SHD226402 TECHNICAL DATA DATA SHEET 606, REV. A Formerly DS302, SHD2262 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.092 Ohm, 18A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY140 Series
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DS302,
SHD2262
SHD226402
IRFY140
O-257
shd2262
shd226402
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SS10015M
Abstract: VEC2820
Text: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one
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VEC2820
ENA0849
SS10015M)
A0849-6/6
SS10015M
VEC2820
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Untitled
Abstract: No abstract text available
Text: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 200V 78m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 10V VGS
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IRF7820PbF
155mH,
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CBVK741B019
Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Text: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature
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FDD2512
CBVK741B019
F63TNR
FDD2512
FDD6680
marking 300 to252
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marking 606
Abstract: diode marking EY
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
FDC606P
NF073
marking 606
diode marking EY
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A2635
Abstract: V2500
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
A2635
V2500
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Mosfet FDD
Abstract: No abstract text available
Text: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature
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FDD2512
Mosfet FDD
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FDD2512
Abstract: No abstract text available
Text: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature
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FDD2512
FDD2512
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FDC606P
Abstract: No abstract text available
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
FDC606P
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DIODE A6 datasheet
Abstract: DIODE A6
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
DIODE A6 datasheet
DIODE A6
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4889
FX606
FX606
2SK1470,
FX606]
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MOSFET 400V TO-220
Abstract: IRF820 IRL820S IRL820T
Text: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.
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IRF820
O-220
MOSFET 400V TO-220
IRF820
IRL820S
IRL820T
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ON semiconductor 340g
Abstract: sot-223 body marking D K Q F
Text: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223
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MMFT2406T1
ON semiconductor 340g
sot-223 body marking D K Q F
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Untitled
Abstract: No abstract text available
Text: Series 1-DCL 7-40Amp • 0-500 Vdc - DC OUTPUT • MOSFET Output • Low On-State Resistance • Paralleling Capability for Higher Currents • Panel Mount • Optically Coupled DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and switching
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7-40Amp
D1D07L
D1D12L
D1D20L
D1D40L
D2D07L
D2D12L
D4D07L
D4D12L
D5D07L
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evld02
Abstract: IXDD415 DEIC420 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC IXLD02 SOP28 Package DE-275 EVDD415 SOP28 socket
Text: DE-Series MOSFET, DEIC420 And SOP-28 IC Device Installation & Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to
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DEIC420
OP-28
DE-275
IXDD415
IXLD02
evld02
SOP-28 thermal
DEIC420 RF MOSFET Gate Driver IC
SOP28 Package
EVDD415
SOP28 socket
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CMX60D20
Abstract: BH17
Text: CMX60D20 20Amp • 0-60 Vdc • DC OUTPUT SIP • MOSFET Output • Extra Low On-State Resistance • PCB Mount DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a PC-mount air-cooled package. Pinouts are compatible with
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CMX60D20
20Amp
SJ/T11364
SJ/T11364
CMX60D20
BH17
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6cw18
Abstract: No abstract text available
Text: Series 1-DCL 7-40Amp • 0-500 Vdc - DC OUTPUT • MOSFET Output • Low On-State Resistance • Paralleling Capability for Higher Currents • Panel Mount • Optically Coupled DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and switching
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7-40Amp
D1D07L
D1D12L
D1D20L
D1D40L
SJ/T11364
SJ/T11364
6cw18
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General Semiconductor SJ diode
Abstract: SJ 76 A DIODE
Text: CMX60D20 20Amp • 0-60 Vdc • DC OUTPUT SIP • MOSFET Output • Extra Low On-State Resistance • PCB Mount DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a PC-mount air-cooled package. Pinouts are compatible with
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20Amp
CMX60D20
SJ/T11364
SJ/T11364
General Semiconductor SJ diode
SJ 76 A DIODE
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Untitled
Abstract: No abstract text available
Text: Series D06D 60-100Amp • 0-60 Vdc • DC OUTPUT • MOSFET Output • Low On-State Resistance • High Current Ratings • Panel Mount DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and switching capabilities to 100 amps at 60 Vdc.
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60-100Amp
D06D60
D06D80
D06D100
SJ/T11364
SJ/T11364
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marking 606
Abstract: No abstract text available
Text: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed
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FX606
FX606
2SK1470,
marking 606
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mosfet W03
Abstract: FDS6690A
Text: F/MRCHII-D S E M IC O N D U C T O R April 1999 t FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been
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FDS6690A
mosfet W03
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