MOSFET 618 Search Results

alc 885

Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Contextual Info: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

FSR510

Abstract: 19v 4.74A package marking 220-6L 19V DC 90w 90w flyback 12V ENERGY LIGHT CIRCUIT DIAGRAM simple 12v to 19v converter FAN6300 JESD22-A114 FSR510R09GZ
Contextual Info: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description ƒ Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller ƒ ƒ Built-In Ultra-Low RDS-ON MOSFET

FSR510

Abstract: 19v 4.74A 90w flyback 19V DC 90w 12V ENERGY LIGHT CIRCUIT DIAGRAM LPC TPM package marking 220-6L simple 12v to 19v converter FAN6300 JESD22-A114
Contextual Info: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description ƒ Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller ƒ ƒ Built-In Ultra-Low RDS-ON MOSFET

AN749

Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Contextual Info: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.

QSC60xx

Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
Contextual Info: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low

RCA 618

Abstract: marking 618
Contextual Info: FDN5618P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.200 Ω @ VGS = –10 V

hf class AB power amplifier mosfet

Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Contextual Info: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

Mosfet J49

Abstract: MRF171 MRF171A VK200 ADC 0824
Contextual Info: Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz

Contextual Info: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

MRF160

Abstract: VK200
Contextual Info: Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

fdn5618p

Contextual Info: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V

FDN5618P

Contextual Info: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V

c617 DIODE

Contextual Info: PD - 9.1258C International I R Rectifier IRLML2803 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching V dss =

Contextual Info: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V

2955E

Abstract: TD 1409
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

MRF151G hf amplifier

Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g
Contextual Info: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

ZVN4306A TO-5

Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Contextual Info: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage

Contextual Info: RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.

mrf166w application note

Abstract: MRF166W
Contextual Info: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics

"RF MOSFETs"

Abstract: AN211A motorola diode 8296 AN721 1N5925A MRF173CQ VK200
Contextual Info: Order this document by MRF173CQ/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF173CQ N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of

planar transformer theory

Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
Contextual Info: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

MRF141G

Abstract: u 172 954 zener AN211A
Contextual Info: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

d3n06

Abstract: MMDF3N06HDR2
Contextual Info: MMDF3N06HD Preferred Device Advance Information Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power