MOSFET 62N Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4114 Preliminary Power MOSFET 20A, 20V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4114 is an N-channel power MOSFET uses UTC’s advanced trench technology to provide customers perfect RDS ON and low gate charge. This device can be applied in Game Machine or in PC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4114 Preliminary Power MOSFET 20A, 20V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4114 is an N-channel power MOSFET uses UTC’s advanced trench technology to provide customers perfect RDS ON and low gate charge. This device can be applied in Game Machine or in PC.

SMK1080

Abstract: power mosfet switching SMK1080CI
Contextual Info: Preliminary SMK1080CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=800V Min. • Low Crss : Crss=15pF(Typ.) • Low gate charge : Qg=62nC(Typ.) • Low RDS(on) :RDS(on)=1.1Ω(Max.)

SMK0990

Abstract: SMK0990CI SMK-0
Contextual Info: Preliminary SMK0990CI Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=900V Min. • Low Crss : Crss=14pF(Typ.) • Low gate charge : Qg=62nC(Typ.) • Low RDS(on) :RDS(on)=1.4Ω(Max.)

36150A

Abstract: E153432 62N15 ISOPLUS247 62N15P 734B2
Contextual Info: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

Contextual Info: Advance Technical Information IXFX 62N25 IXFK 62N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient

62n25

Abstract: 62n25 mosfet 62n2 247TM
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient

Contextual Info: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE73N199 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE20N170U Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

62N15P

Contextual Info: Advanced Technical Information IXTQ 62N15P IXTA 62N15P IXTP 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS on (Electrically Isolated Tab) = 150 V = 36 A ≤ 45 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

62N15P

Abstract: 62n1 62N15 IXTP62N15P
Contextual Info: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET™ Power MOSFET ‚ RoHS Compliant, Halogen Free  l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification

IRF7759L2TR

Abstract: IRF7759L2TR1PBF diode 009 IRF7759
Contextual Info: PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET™ Power MOSFET ‚ RoHS Compliant, Halogen Free  l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification

irf9395

Contextual Info: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

INTEGRATOR 9435

Abstract: mosfet 62N 4435 mosfet TQFP48 VRD10 CDF-AEC-Q100-002 CS216 L6711 L6711TR K2750
Contextual Info: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps

Contextual Info: IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits

irf9395

Abstract: IRF9395M IRF9395MTR1PBF IRF9395MTRPBF
Contextual Info: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

L6711-based

Abstract: CDF-AEC-Q100-002 L6711 L6711TR TQFP48 VRD10 K2750
Contextual Info: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps

Contextual Info: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application