MOSFET 65V 75A Search Results

Contextual Info: LM5060 www.ti.com SNVS628E – OCTOBER 2009 – REVISED JANUARY 2012 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100

Contextual Info: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100

MIL-PRF-19500/684

Abstract: irf 1490 IRHNA57163SE JANSR2N7472U2
Contextual Info: PD-93856E IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2

IRHNA57163SE

Contextual Info: PD - 93856B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL 4# TECHNOLOGY c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides

IRHNA57163SE

Contextual Info: PD - 93856A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL 4# TECHNOLOGY c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides

Contextual Info: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100

Contextual Info: PD - 93856C IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2

Contextual Info: PD-93856E IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2

IRHNA57163SE

Abstract: JANSR2N7472U2 MIL-PRF-19500 684
Contextual Info: PD-93856D IRHNA57163SE JANSR2N7472U2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/684 5 TECHNOLOGY ™ Product Summary Part Number IRHNA57163SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number 0.0135Ω 75A* JANSR2N7472U2

Contextual Info: LM5060 www.ti.com SNVS628F – OCTOBER 2009 – REVISED APRIL 2013 LM5060 High-Side Protection Controller with Low Quiescent Current Check for Samples: LM5060 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Available in Automotive Grade / AEC Q-100

IRHNA57163SE

Abstract: 93856
Contextual Info: PD - 93856 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL R5 TECHNOLOGY ™ ™ Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides

Mosfet

Abstract: SSF1007
Contextual Info: SSF1007 100V N-Channel MOSFET Main Product Characteristics VDSS 100V（Typ） RDS on 6mohm（Typ） ID 130A Features and Benefits       SSF1007 Top View (TO-220) Advanced trench MOSFET process technology Special designed for convertors and power controls

Mosfet

Abstract: SSS1206
Contextual Info: SSS1206 120V N-Channel MOSFET Main Product Characteristics VDSS 120V RDS on 4mΩ (typ.) ID 180A ① TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and

AN-994

Abstract: 9620* diode
Contextual Info: PD - 97061C IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

AN-994

Abstract: power mosfet 80v 150a D2PAK package IRFS4410PBF to262 pcb footprint
Contextual Info: PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

MOSFET IRF 570

Abstract: IRFS4310ZPBF AN-994 marking code jk IRF 120A power mosfet 80v 150a High Efficiency Synchronous Rectification in SMPS
Contextual Info: PD - 97115B IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 540 mosfet

Abstract: MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf
Contextual Info: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

power mosfet 80v 150a

Abstract: AN-994 Sl4410 High Efficiency Synchronous Rectification in SMPS
Contextual Info: PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Single

Contextual Info: SSS1004A7 Main Product Characteristics VDSS 100V RDS on 3.0mΩ (typ.) ID 180A ① 1, Gate 2~3,5~7 Source 4,8 Drain TO-263-7L Schematic diagram Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and

N-Channel vgs 40V MOSFET

Abstract: HUFA7510P3 HUFA7510S3S
Contextual Info: HUFA7510P3, HUFA7510S3S Data Sheet A d van ce I n f o r m a tio n November 1999 File Number 4802 75A, 75V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET [ /Title Packaging Features HUF76 JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance 400SK8 - rDS(ON = 0.010Ω, VGS = 10V

Contextual Info: PD - 97061 IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

IRFB4110PBF

Contextual Info: PD - 97061B IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

IRFB4110

Abstract: IRFB4110PBF n-channel, 85v, 75a AN-994 9620* diode
Contextual Info: PD - 97061B IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

AN-994

Abstract: n-channel, 85v, 75a IRFB4110PBF
Contextual Info: PD - 97061A IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness