MOSFET 740 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 96088 IRF7343IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description

utc 324

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

IRF7343

Contextual Info: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier

13003 MOSFET

Abstract: sw 13003 13003 MOSFET transistor transistor sd 13003 MARKING QV 13003 sd sw 13003 A MOSFET CPH5819 MCH3408 SBS006M
Contextual Info: Ordering number : ENN7409 CPH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5819 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2171

C4125

Abstract: single gate "Shottky" Schottky Diode 40V 6A
Contextual Info: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the

Contextual Info: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

AN569

Abstract: MTW24N40E mosfet transistor 400 volts.100 amperes
Contextual Info: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

FQP4N90C

Abstract: FQPF4N90C
Contextual Info: FQP4N90C / FQPF4N90C N-Channel QFET MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary URFP064 Power MOSFET 70A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC URFP064 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching

AUIRF7343Q

Abstract: AUIRF7343QTR
Contextual Info: PD - 96343 AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*

Contextual Info: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

Contextual Info: PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*

4n90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

IRF P CHANNEL MOSFET

Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
Contextual Info: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

4N90

Abstract: mosfet 740 4n90 MOSFEt
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

mosfet 740

Abstract: 4n90
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the