MOSFET 7403 Search Results

SI4634DY-T1-E3

Abstract: 74030 Si4634DY
Contextual Info: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

Contextual Info: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ) 21.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

Si4634DY

Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

si4634

Abstract: si46
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

0715

Abstract: AN609 Si6466ADQ
Contextual Info: Si6466ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

A 1469 mosfet

Abstract: AN609 Si6469DQ
Contextual Info: Si6469DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9585

Abstract: AN609 Si6465DQ
Contextual Info: Si6465DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

8650

Abstract: AN609 Si6463BDQ 74036
Contextual Info: Si6463BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si6882EDQ 74038
Contextual Info: Si6882EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74032

Abstract: AN609 Si6467BDQ 51171
Contextual Info: Si6467BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

Si7662

Contextual Info: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested

Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

Si7634BDP-T1-GE3

Abstract: Si7634BDP Si7634BDP-T1-E3 7403-1 si7634 SI7634B
Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

Si7662

Abstract: Si7662DP
Contextual Info: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested

Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

Si7634BDP-T1-E3

Abstract: Si7634BDP Si7634BDP-T1-GE3
Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

7408 mosfet

Abstract: logic diagram of ic 7404 ABZH ABZI 7402 logic gate ic IC AND GATE 7408 pin configuration 7408 voltage regulator 7405 power regulator connecting diagram for ic 7404 MAX8873REUK-T
Contextual Info: 19-1257; Rev 0; 7/97 Low-Dropout, 120mA Linear Regulators For dual versions, refer to the MAX8865/MAX8866 data sheet. For low-noise versions with 30µVRMS output noise, refer to the MAX8877/MAX8878. _Applications Cordless Telephones

ABZL

Abstract: IC AND GATE 7408 pin configuration ABZH 7408 voltage regulator ABZI LP2980 MAX8873REUK-T MAX8873SEUK-T MAX8873TEUK-T MAX8874
Contextual Info: 19-1257; Rev 1; 3/98 Low-Dropout, 120mA Linear Regulators For dual versions, refer to the MAX8865/MAX8866 data sheet. For low-noise versions with 30µVRMS output noise, refer to the MAX8877/MAX8878. _Applications Cordless Telephones

ABZH

Abstract: ABZL ic 7404 pin configuration logic diagram specifications 7408 voltage regulator ABZI 7405 power regulator ABZJ 7408 mosfet sot23 abzk advantages for ic 7404
Contextual Info: 19-1257; Rev 1; 3/98 Low-Dropout, 120mA Linear Regulators For dual versions, refer to the MAX8865/MAX8866 data sheet. For low-noise versions with 30µVRMS output noise, refer to the MAX8877/MAX8878. _Applications Cordless Telephones

IC AND GATE 7408 specification sheet

Abstract: IC free 7404 7408 voltage regulator TOP CODE ABZH IC 7408 and function ABZK
Contextual Info: MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _General Description _Features The MAX8873T/S/R and MAX8874T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 82µA supply current to remain independent of load, making these devices ideal for

IC AND GATE 7408 specification sheet

Abstract: TOP CODE ABZH ABZK
Contextual Info: MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _General Description _Features The MAX8873T/S/R and MAX8874T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 82µA supply current to remain independent of load, making these devices ideal for