MOSFET 7660 Search Results

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features ̈ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

7660D

Abstract: L41B 10-L41B-11 FDMC7660DC
Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested

Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested

Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested

SI7658DP-T1-E3

Abstract: Si7658DP Si7658DP-T1-GE3 74966 si7658
Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested

Si7658DP-T1-E3

Abstract: Si7658DP
Contextual Info: New Product Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ) 48.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

76609d

Abstract: AN9321 HUFA76609D3 HUFA76609D3S HUFA76609D3ST TB334
Contextual Info: HUFA76609D3, HUFA76609D3S Data Sheet November 2000 File Number 4988 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76609D3S HUFA76609D3

76609D

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
Contextual Info: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3

76609D

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
Contextual Info: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3

76609D

Abstract: AN9321 AN9322 HUFA76609D3ST TB334
Contextual Info: HUFA76609D3ST_F085 Data Sheet November 2008 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-252AA DRAIN FLANGE GATE SOURCE HUFA76609D3ST_F085 Symbol D G Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V

Contextual Info: HUFA76609D3, HUFA76609D3S TM Data Sheet November 2000 File Number 4988 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76609D3S HUFA76609D3

76609D

Abstract: AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
Contextual Info: HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3 Features • Ultra Low On-Resistance

76609D

Abstract: AN9321 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
Contextual Info: HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 09D UF76 9D3 bt A, 0V, 65 m, Packaging JEDEC TO-251AA DRAIN FLANGE eyrds terrpoon , an, gic vel raF wer DRAIN

IRFBA22N50A

Abstract: transformer 220 25v mosfet 110A
Contextual Info: PD- 95904 IRLBA1304PbF HEXFET Power MOSFET l Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated O Purchase IRLBA1304/P for solder plated option. l Lead-Free

mosfet 7660

Abstract: Si7658DP PF435
Contextual Info: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7658DP

Contextual Info: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

HEXFET pinout

Abstract: IRLBA1304 Mosfet P 110A,
Contextual Info: PD- 91842A IRLBA1304 HEXFET Power MOSFET l Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated ● Purchase IRLBA1304/P for solder plated option. l l l

Contextual Info: HUF76609D3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models

IRLBL1304

Abstract: Mosfet P 110A, ir 230h
Contextual Info: PD- 91843A IRLBL1304 HEXFET Power MOSFET l l l l l l l >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application condition vs. D2Pak D VDSS = 40V

ir 230h

Abstract: 41a 934
Contextual Info: PD- 91843 IRLBL1304 HEXFET Power MOSFET l l l l l l l >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application condition vs. D2Pak D VDSS = 40V

76609D

Contextual Info: interrii HUF76609D3, HUF76609D3S Data Sheet October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance ' rDS ON = 0.16O£2, VQS= 10V • rDS(ON) = °-165£J. VGS = 5V