MOSFET 800V 3A Search Results

Contextual Info: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

6NC80Z

Abstract: L9 Zener STB6NC80Z-1 STP6NC80Z STP6NC80ZFP stp6nc80z-1 6nc80
Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z-1 800V < 1.8 Ω 5.4 A TYPICAL RDS(on) = 1.5 Ω

L9 Zener

Abstract: STP7NC80ZFP 7NC80Z W 7NC80Z
Contextual Info: STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC80Z/FP 800V < 1.5Ω 6.1 A STB7NC80Z-1 800V < 1.5Ω 6.1 A 3 • ■ ■ ■ ■ TYPICAL RDS(on) = 1.3Ω

59 L2 zener

Abstract: L9 Zener STB6NC80Z STB6NC80Z-1 STP6NC80Z STP6NC80ZFP
Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω

6NC80Z

Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω

Contextual Info: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

6NC80Z

Abstract: MOSFET 800V 3A 59 L2 zener L9 Zener STB6NC80Z STB6NC80Z-1 STP6NC80Z STP6NC80ZFP 6nc80
Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ 3 1 TYPICAL RDS(on) = 1.5 Ω

T7111

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING I q J w e Q w r V d s s . 800V I d . 3A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6NM80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a

6n80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a

Contextual Info: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

Contextual Info: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

Contextual Info: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

Contextual Info: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3KM-16A HIGH-SPEED SWITCHING USE FS3KM-16A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • V ds s . 800V • TDS ON (M AX) . 3.3Q

P4NK80Zfp

Abstract: P4NK80Z STP4NK80ZFP p4nk80 d4nk8 D4NK80Z
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800

P4NK80Zfp

Abstract: P4NK80Z p4nk80 d4nk8 D4NK80Z STP4NK80ZFP
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS

3N80C

Abstract: FQPF*3N80C DATE CODE FAIRCHILD
Contextual Info: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF*3N80C

Abstract: FQPF Series FQP3N80C FQPF3N80C MJ107
Contextual Info: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

P4NK80Zfp

Abstract: p4nk80 d4nk8 P4NK80Z d4nk80z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 STD4NK80ZT4 STP4NK80Z
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features • Type VDSS @Tjmax RDS(on) ID STP4NK80Z 800 V < 3.5 Ω 3A STP4NK80ZFP 800 V < 3.5 Ω 3A STD4NK80Z

P4NK80Zfp

Abstract: P4NK80Z STP4NK80ZFP STP4NK80Z D4NK80Z STD4NK80Z STD4NK80Z-1 STD4NK80ZT4 d4nk8 IPAK ST
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < 3.5 < 3.5

P4NK80Zfp

Abstract: P4NK80Z D4NK8 p4nk80 d4nk80z STP4NK80ZFP d4nk STD4NK80ZT4 STP4NK80Z
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 800 V 800 V 800 V