9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDH210N08
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SCH2807
Abstract: MARKING QG
Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)
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SCH2807
ENN8215
SCH1407)
SS05015)
SCH2807
MARKING QG
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MCH3447
Abstract: MCH5824 marking xa
Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)
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MCH5824
ENN8201
MCH3447)
SS05015)
MCH3447
MCH5824
marking xa
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
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at 8515
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8515
AAT8515
SC70JW-8
at 8515
AAT8515IJS-T1
mosfet 23 Tsop-6
150C1
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AAT8543
Abstract: AAT8543IJS-T1 SC70JW-8
Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8543
AAT8543
SC70JW-8
AAT8543IJS-T1
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Untitled
Abstract: No abstract text available
Text: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
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ENA0440
SCH2811
A0440-6/6
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Untitled
Abstract: No abstract text available
Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD19N10L
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diode 22b3
Abstract: 22B3
Text: PD - 96140 IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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IRFH7932PbF
078mH,
diode 22b3
22B3
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Untitled
Abstract: No abstract text available
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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6140A
IRFH7932PbF
071mH,
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Untitled
Abstract: No abstract text available
Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS
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IRFH7932PbF
IRFH7932TRPbF
IRFH7932TR2PbF
IRFH7934PbF
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Untitled
Abstract: No abstract text available
Text: FQB19N20C N-Channel QFET MOSFET 200 V, 19 A, 170 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQB19N20C
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IRF Power MOSFET code marking
Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l
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6140A
IRFH7932PbF
071mH,
IRF Power MOSFET code marking
24v 12v 20A regulator
IRFH7932pbF
DM marking code
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AAT8512
Abstract: AAT8512IJS-T1 SC70JW-8
Text: AAT8512 28V P-Channel Power MOSFET General Description Features The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT8512
AAT8512
AAT8512IJS-T1
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQD19N10L
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Untitled
Abstract: No abstract text available
Text: N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 m Features Description ® ® SuperFET II FRFET MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET, utilizes advanced charge-balance technology for outstandingly low on-state resistance and
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NX3008NBKMB
Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
DFN1006B-3,
AEC-Q101
Q3/2012
NX3008NBKMB
BSS138BK
BSS84AKS
PMV48XP
BSH201
2N7002PW
nx2301
PMPB27XP
PMF170XP
2N7002PS
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FQPF16N25C
Abstract: FQPF*16n25c FQP16N25C
Text: FQP16N25C / FQPF16N25C N-Channel QFET MOSFET 250 V, 15.6 A, 270 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP16N25C/FQPF16N25C
FQP16N25C
FQPF16N25C
FQPF16N25C
FQPF*16n25c
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Untitled
Abstract: No abstract text available
Text: FQD12N20L / FQU12N20L N-Channel QFET MOSFET 200 V, 9.0 A, 280 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD12N20L
FQU12N20L
FQU12N20L
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Untitled
Abstract: No abstract text available
Text: FQD10N20L / FQU10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD10N20L
FQU10N20L
FQU10N20L
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AAT8515IJS
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT8515
AAT8515
SC70JW-8
AAT8515IJS-T1
048REF
AAT8515IJS
AAT8515IJS-T1
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: FQA90N15 / FQA90N15_F109 N-Channel QFET MOSFET 150 V, 90 A, 18 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQA90N15
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fqd19n10l
Abstract: No abstract text available
Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQD19N10L
FQD19N10L
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