MOSFET 840 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 mΩ Features Description • RDS on = 34 mΩ (Typ.) @ VGS = 10 V, ID = 30.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

fdp61n20

Abstract: *61n20
Contextual Info: FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 m Features Description • RDS on = 41 m (Max.) @ VGS = 10 V, ID = 30.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10

TA 8403 A

Abstract: w507 FW507 MCH3312 SB1003M
Contextual Info: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and

FDD6676S

Abstract: FDS6676S
Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

Contextual Info: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

40N60C

Abstract: ISOPLUS247
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol

Contextual Info: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

Contextual Info: FQP11N40C / FQPF11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

IRF7832Z

Abstract: MOSFET NOTEBOOK
Contextual Info: PD - 96975A IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

6N65Z

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65Z Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

EIA-541

Contextual Info: PD - 96082A IRF7832ZUPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and

Contextual Info: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5A, 400V N-CHANNEL POWER MOSFET 1 „ The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

10N30

Abstract: 738A power mosfet 200A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

10N30

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS