MOSFET 900V 3A Search Results

stp3nc90zfp

Abstract: STB3NC90Z-1 STP3NC90Z 3nc90z L9 Zener
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

STP3NC90ZFP

Abstract: STB3NC90Z-1 STP3NC90Z L9 Zener MOSFET 900V TO-220 3NC90 3nc90z
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

3NC90

Abstract: stp3nc90zfp STB3NC90Z-1 STP3NC90Z L9 Zener
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

stp3nc90zfp

Abstract: L9 Zener STB3NC90Z-1 STP3NC90Z 3nc90z MOSFET 900V TO-220
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

MOSFET 900V TO-220

Abstract: 6nc90z L9 Zener STP6NC90Z STB6NC90Z-1 STP6NC90ZFP Zener Diode 3A 6nc90 B6NC90Z
Contextual Info: STP6NC90Z - STP6NC90ZFP STB6NC90Z-1 N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC90Z/FP 900V < 1.9 Ω 5.4 A STB6NC90Z-1 900V < 1.9 Ω 5.4 A TYPICAL RDS(on) = 1.55Ω

mosfet NTE2384

Abstract: NTE2384 mosfet for 900V, 6A
Contextual Info: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

STB3NC90

Abstract: STB3NC90Z K900
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED

FS3UM18A

Abstract: UJ2D
Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS3UM-18A | I HIGH-SPEED SWITCHING USE FS3UM-18A • V ds s . 900V • rDS ON (MAX) . - •■ 4.0Q

STB3NC90

Abstract: STB3NC90Z
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED

STB3NC90

Abstract: STB3NC90Z 1574T
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE

27M13

Abstract: 02fa2
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3SM-18A I i HIGH-SPEED SWITCHING USE [ FS3SM-18A • V ds s . 900V • TDS ON (MAX) . 4.0C2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS7UM-18A HIGH-SPEED SWITCHING USE FS7UM-18A • V ds s . 900V • rDS ON (MAX) . 2.0Q • I D . 7A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

3n90

Abstract: 3N90L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FS3KM18A

Abstract: FS3KM-18A FS3KM18 71Q1
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2

9n80

Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

9N90L-T3P-T

Abstract: TO247 package dissipation 9N90
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

9n90

Abstract: w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

9N90

Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

Contextual Info: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

2SK2668

Abstract: FP3W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2665

Abstract: F3S90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.