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    MOSFET 900V 3A Search Results

    MOSFET 900V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1775-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 8A 1600Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK1808-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 4A 4000Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK1647L-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 2A 7000Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK1340-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 5A 4000Mohm To-3P Visit Renesas Electronics Corporation
    2SK1807-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 4A 4000Mohm To-220Ab Visit Renesas Electronics Corporation

    MOSFET 900V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stp3nc90zfp

    Abstract: STB3NC90Z-1 STP3NC90Z 3nc90z L9 Zener
    Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω


    Original     		PDF STP3NC90Z STP3NC90ZFP STB3NC90Z-1 O-220/TO-220FP/I2PAK STP3NC90Z/FP O-220 O-220FP O-220) stp3nc90zfp STB3NC90Z-1 3nc90z L9 Zener

    STP3NC90ZFP

    Abstract: STB3NC90Z-1 STP3NC90Z L9 Zener MOSFET 900V TO-220 3NC90 3nc90z
    Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω


    Original     		PDF STP3NC90Z STP3NC90ZFP STB3NC90Z-1 O-220/TO-220FP/I2PAK STP3NC90Z/FP STP3NC90ZFP STB3NC90Z-1 L9 Zener MOSFET 900V TO-220 3NC90 3nc90z

    3NC90

    Abstract: stp3nc90zfp STB3NC90Z-1 STP3NC90Z L9 Zener
    Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω


    Original     		PDF STP3NC90Z STP3NC90ZFP STB3NC90Z-1 O-220/TO-220FP/I2PAK STP3NC90Z/FP O-220 O-220FP O-220) 3NC90 stp3nc90zfp STB3NC90Z-1 L9 Zener

    stp3nc90zfp

    Abstract: L9 Zener STB3NC90Z-1 STP3NC90Z 3nc90z MOSFET 900V TO-220
    Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω


    Original     		PDF STP3NC90Z STP3NC90ZFP STB3NC90Z-1 O-220/TO-220FP/I STP3NC90Z/FP O-220 O-220FP O-220) stp3nc90zfp L9 Zener STB3NC90Z-1 3nc90z MOSFET 900V TO-220

    MOSFET 900V TO-220

    Abstract: 6nc90z L9 Zener STP6NC90Z STB6NC90Z-1 STP6NC90ZFP Zener Diode 3A 6nc90 B6NC90Z
    Text: STP6NC90Z - STP6NC90ZFP STB6NC90Z-1 N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC90Z/FP 900V < 1.9 Ω 5.4 A STB6NC90Z-1 900V < 1.9 Ω 5.4 A TYPICAL RDS(on) = 1.55Ω


    Original     		PDF STP6NC90Z STP6NC90ZFP STB6NC90Z-1 O-220/TO-220FP/I STP6NC90Z/FP O-220 O-220FP O-220) P011C MOSFET 900V TO-220 6nc90z L9 Zener STB6NC90Z-1 STP6NC90ZFP Zener Diode 3A 6nc90 B6NC90Z

    mosfet NTE2384

    Abstract: NTE2384 mosfet for 900V, 6A
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		PDF NTE2384 00A/s, mosfet NTE2384 NTE2384 mosfet for 900V, 6A

    STB3NC90

    Abstract: STB3NC90Z K900
    Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED


    Original     		PDF STB3NC90Z STB3NC90 STB3NC90 STB3NC90Z K900

    STB3NC90

    Abstract: STB3NC90Z
    Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED


    Original     		PDF STB3NC90Z STB3NC90 STB3NC90 STB3NC90Z

    STB3NC90

    Abstract: STB3NC90Z 1574T
    Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE


    Original     		PDF STB3NC90Z STB3NC90 STB3NC90 STB3NC90Z 1574T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TC3-T 3N90G-TC3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T

    3n90

    Abstract: 3N90L
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R 3N90L-TM3-T 3N90G-TM3-T 3n90 3N90L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N90-E 3N90-E 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TN3-R 3N90G-TN3-R O-251 O-251S2

    9n80

    Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L 9N90G 9N90-T3P-T 9N90L-T3P-T QW-R502-217 9n80 9N90-T3P-T 9N90 9N90L-T3P-T

    9N90L-T3P-T

    Abstract: TO247 package dissipation 9N90
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-T47t QW-R502-217 9N90L-T3P-T TO247 package dissipation 9N90

    Untitled

    Abstract: No abstract text available
    Text: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF6N90 AOTF6N90 AOTF6N90L O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		PDF 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90at QW-R502-217

    9N90

    Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 9N90L QW-R502-217 9N90 w 9n90 9N90L-T3P-T 9N90-T3P-T

    Untitled

    Abstract: No abstract text available
    Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		PDF AOTF3N90 AOTF3N90 AOTF3N90L O-220F

    2SK2668

    Abstract: FP3W90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2

    2SK2665

    Abstract: F3S90HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2665 F3S90HVX2 STO-220 2SK2665 F3S90HVX2

    FS3UM18A

    Abstract: UJ2D
    Text: MITSUBISHI Neh POWER MOSFET ! FS3UM-18A | I HIGH-SPEED SWITCHING USE FS3UM-18A • V ds s . 900V • rDS ON (MAX) . - •■ 4.0Q


    OCR Scan     		PDF FS3UM-18A 1CH23 FS3UM18A UJ2D

    27M13

    Abstract: 02fa2
    Text: MITSUBISHI Neh POWER MOSFET FS3SM-18A I i HIGH-SPEED SWITCHING USE [ FS3SM-18A • V ds s . 900V • TDS ON (MAX) . 4.0C2


    OCR Scan     		PDF FS3SM-18A 27M13 02fa2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS7UM-18A HIGH-SPEED SWITCHING USE FS7UM-18A • V ds s . 900V • rDS ON (MAX) . 2.0Q • I D . 7A


    OCR Scan     		PDF FS7UM-18A

    FS3KM18A

    Abstract: FS3KM-18A FS3KM18 71Q1
    Text: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2


    OCR Scan     		PDF FS3KM-18A O-22QFN 71Q-123 FS3KM18A FS3KM-18A FS3KM18 71Q1