stp3nc90zfp
Abstract: STB3NC90Z-1 STP3NC90Z 3nc90z L9 Zener
Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω
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STP3NC90Z
STP3NC90ZFP
STB3NC90Z-1
O-220/TO-220FP/I2PAK
STP3NC90Z/FP
O-220
O-220FP
O-220)
stp3nc90zfp
STB3NC90Z-1
3nc90z
L9 Zener
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STP3NC90ZFP
Abstract: STB3NC90Z-1 STP3NC90Z L9 Zener MOSFET 900V TO-220 3NC90 3nc90z
Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω
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STP3NC90Z
STP3NC90ZFP
STB3NC90Z-1
O-220/TO-220FP/I2PAK
STP3NC90Z/FP
STP3NC90ZFP
STB3NC90Z-1
L9 Zener
MOSFET 900V TO-220
3NC90
3nc90z
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3NC90
Abstract: stp3nc90zfp STB3NC90Z-1 STP3NC90Z L9 Zener
Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω
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STP3NC90Z
STP3NC90ZFP
STB3NC90Z-1
O-220/TO-220FP/I2PAK
STP3NC90Z/FP
O-220
O-220FP
O-220)
3NC90
stp3nc90zfp
STB3NC90Z-1
L9 Zener
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stp3nc90zfp
Abstract: L9 Zener STB3NC90Z-1 STP3NC90Z 3nc90z MOSFET 900V TO-220
Text: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω
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STP3NC90Z
STP3NC90ZFP
STB3NC90Z-1
O-220/TO-220FP/I
STP3NC90Z/FP
O-220
O-220FP
O-220)
stp3nc90zfp
L9 Zener
STB3NC90Z-1
3nc90z
MOSFET 900V TO-220
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MOSFET 900V TO-220
Abstract: 6nc90z L9 Zener STP6NC90Z STB6NC90Z-1 STP6NC90ZFP Zener Diode 3A 6nc90 B6NC90Z
Text: STP6NC90Z - STP6NC90ZFP STB6NC90Z-1 N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC90Z/FP 900V < 1.9 Ω 5.4 A STB6NC90Z-1 900V < 1.9 Ω 5.4 A TYPICAL RDS(on) = 1.55Ω
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STP6NC90Z
STP6NC90ZFP
STB6NC90Z-1
O-220/TO-220FP/I
STP6NC90Z/FP
O-220
O-220FP
O-220)
P011C
MOSFET 900V TO-220
6nc90z
L9 Zener
STB6NC90Z-1
STP6NC90ZFP
Zener Diode 3A
6nc90
B6NC90Z
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mosfet NTE2384
Abstract: NTE2384 mosfet for 900V, 6A
Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
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NTE2384
00A/s,
mosfet NTE2384
NTE2384
mosfet for 900V, 6A
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STB3NC90
Abstract: STB3NC90Z K900
Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STB3NC90Z
STB3NC90
STB3NC90
STB3NC90Z
K900
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STB3NC90
Abstract: STB3NC90Z
Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STB3NC90Z
STB3NC90
STB3NC90
STB3NC90Z
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STB3NC90
Abstract: STB3NC90Z 1574T
Text: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE
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STB3NC90Z
STB3NC90
STB3NC90
STB3NC90Z
1574T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90L-TA3-T
3N90G-TA3-T
3N90L-TC3-T
3N90G-TC3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TF1-T
3N90G-TF1-T
3N90L-TF2-T
3N90G-TF2-T
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3n90
Abstract: 3N90L
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90L-TA3-T
3N90G-TA3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
3N90L-TM3-T
3N90G-TM3-T
3n90
3N90L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90-E
3N90-E
3N90L-TM3-T
3N90G-TM3-T
3N90L-TMS2-T
3N90G-TMS2-T
3N90L-TN3-R
3N90G-TN3-R
O-251
O-251S2
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9n80
Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L
9N90G
9N90-T3P-T
9N90L-T3P-T
QW-R502-217
9n80
9N90-T3P-T
9N90
9N90L-T3P-T
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9N90L-T3P-T
Abstract: TO247 package dissipation 9N90
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-T47t
QW-R502-217
9N90L-T3P-T
TO247 package dissipation
9N90
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Untitled
Abstract: No abstract text available
Text: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOTF6N90
AOTF6N90
AOTF6N90L
O-220F
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90at
QW-R502-217
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9N90
Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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9N90L
QW-R502-217
9N90
w 9n90
9N90L-T3P-T
9N90-T3P-T
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Untitled
Abstract: No abstract text available
Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOTF3N90
AOTF3N90
AOTF3N90L
O-220F
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2SK2668
Abstract: FP3W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2668
FP3W90HVX2
2SK2668
FP3W90HVX2
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2SK2665
Abstract: F3S90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2665
F3S90HVX2
STO-220
2SK2665
F3S90HVX2
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FS3UM18A
Abstract: UJ2D
Text: MITSUBISHI Neh POWER MOSFET ! FS3UM-18A | I HIGH-SPEED SWITCHING USE FS3UM-18A • V ds s . 900V • rDS ON (MAX) . - •■ 4.0Q
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FS3UM-18A
1CH23
FS3UM18A
UJ2D
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27M13
Abstract: 02fa2
Text: MITSUBISHI Neh POWER MOSFET FS3SM-18A I i HIGH-SPEED SWITCHING USE [ FS3SM-18A • V ds s . 900V • TDS ON (MAX) . 4.0C2
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FS3SM-18A
27M13
02fa2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS7UM-18A HIGH-SPEED SWITCHING USE FS7UM-18A • V ds s . 900V • rDS ON (MAX) . 2.0Q • I D . 7A
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FS7UM-18A
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FS3KM18A
Abstract: FS3KM-18A FS3KM18 71Q1
Text: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2
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FS3KM-18A
O-22QFN
71Q-123
FS3KM18A
FS3KM-18A
FS3KM18
71Q1
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