MOSFET 913 Search Results

international rectifier

Abstract: IRFM260 4.5v to 100v input regulator
Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF*260

Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

irf 44 n

Abstract: IRF7413
Contextual Info: PD - 91330D IRF7413 PROVISIONAL HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G

IRf 48 MOSFET

Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330
Contextual Info: PD - 91330E IRF7413 HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V

AN799 Matching MOSFET Drivers to MOSFETs

Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Contextual Info: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of

24V 10A SMPS

Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7413 SMPS 24V
Contextual Info: PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

AN1001

Abstract: EIA-541 F7101 IRF7101 IRF7413
Contextual Info: PD- 91330G IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

SMD 51A

Abstract: IRHNA3160 IRHNA4160 IRHNA7160 IRHNA8160 JANSR2N7432U
Contextual Info: PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on)

Matching MOSFET Drivers to MOSFETs

Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
Contextual Info: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being

smd 43a

Abstract: IRHNA3260 IRHNA4260 IRHNA7260 IRHNA8260 JANSR2N7433U
Contextual Info: PD - 91397B IRHNA7260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7260 100K Rads (Si) IRHNA3260 300K Rads (Si) RDS(on)

SCH2815

Abstract: 9130
Contextual Info: SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package

IRHN7450SE

Contextual Info: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET

IRH7450SE

Contextual Info: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Abstract: HEXFET Power MOSFET SMD2
Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Contextual Info: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 96107A IRF7314QPbF HEXFET Power MOSFET Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8

sc1142

Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving