MOSFET APPLICATION HINTS Search Results
MOSFET APPLICATION HINTS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET APPLICATION HINTS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AN9405
Abstract: PWM 3 phase dc-ac inverter three HIP4086 HIP4082 AN9404 AN9525 schematic diagram dc-ac inverter sensor CA3260 HIP4080A HIP408X
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HIP4086 AN9642 AN9405 PWM 3 phase dc-ac inverter three HIP4082 AN9404 AN9525 schematic diagram dc-ac inverter sensor CA3260 HIP4080A HIP408X | |
AN885 - "Brushless DC Motor Fundamentals"
Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
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AN898 DK-2750 D-85737 NL-5152 AN885 - "Brushless DC Motor Fundamentals" S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT | |
vfo 200v 0.4kw
Abstract: dipipm dipipm application note
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PSM03S93E5-A PSM05S93E5-A vfo 200v 0.4kw dipipm dipipm application note | |
PNP Transistor MOSFET
Abstract: logic gate P-mosfet TRANSISTOR mosfet TSM108 105M 700M TSM108I car battery charger circuit diagram
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TSM108 TSM108 PNP Transistor MOSFET logic gate P-mosfet TRANSISTOR mosfet 105M 700M TSM108I car battery charger circuit diagram | |
100w high power car amplifier
Abstract: 105M 700M TSM108 TSM108I mosfet 100w 12v amplifier 100w car amplifier
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TSM108 TSM108 100w high power car amplifier 105M 700M TSM108I mosfet 100w 12v amplifier 100w car amplifier | |
ne555 vco
Abstract: how to convert 220v ac to 12v dc 220v DC MOTOR SPEED CONTROL USING ic regulator ic 555 timer gate drive scr AC OVERload PROTECTION CIRCUIT 555 timer DC motor speed control using 555 timer and mosfet ne555 220v dc motor 220V speed control with scr normal relay for controlling 230v ac by using 5v AN9318
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transistor UV1
Abstract: High Current Switching Applications transistor 72m transistor
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TSM108 TSM108 transistor UV1 High Current Switching Applications transistor 72m transistor | |
100w high power car amplifier
Abstract: 105M 700M TSM108 TSM108I pwm step down 100W transistor UV1
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TSM108 TSM108 100w high power car amplifier 105M 700M TSM108I pwm step down 100W transistor UV1 | |
200 Amp bridge mosfet
Abstract: car battery charger transistor UV1
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TSM108 SO-14 TSM108 200 Amp bridge mosfet car battery charger transistor UV1 | |
IPT004N03Contextual Info: Preliminary OptiMOSTM Power-MOSFET IPT004N03L Product Summary Features • Optimized for e-fuse and ORing application • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS(on),max 0.4 mW ID |
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IPT004N03L 004N03L IPT004N03 | |
Contextual Info: BSF053N03LT G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSF053N03LT | |
MP3003Contextual Info: BSB053N03LP G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSB053N03LP MP3003 | |
Contextual Info: BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for e-fuse and ORing application • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 0.9 mW ID 100 A QOSS |
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BSC009NE2LS IEC61249-2-21 009NE2LS | |
Contextual Info: BSB024N03LX G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 2.4 mΩ ID 145 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSB024N03LX | |
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Contextual Info: BSB053N03LP G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application CanPAK |
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BSB053N03LP | |
Contextual Info: BSF083N03LQ G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 8.3 mΩ ID 53 A • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application CanPAK |
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BSF083N03LQ | |
MP3003Contextual Info: BSB053N03LP G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSB053N03LP MP3003 | |
Contextual Info: BSF053N03LT G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application CanPAK |
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BSF053N03LT | |
Contextual Info: BSB024N03LX G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 2.4 mΩ ID 145 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSB024N03LX | |
IPT004N03
Abstract: IPT004N03L d150 fet IPT00 f150a
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IPT004N03L 004N03L IPT004N03 IPT004N03L d150 fet IPT00 f150a | |
Contextual Info: BSB019N03LX G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 1.9 mΩ ID 174 A • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application MG-WDSON-2 |
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BSB019N03LX | |
Contextual Info: BSF083N03LQ G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 8.3 mΩ ID 53 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSF083N03LQ | |
Contextual Info: BSB024N03LX G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 2.4 mΩ ID 145 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application |
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BSB024N03LX | |
Contextual Info: BSC090N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 9 mW VGS=4.5 V 11.2 ID 48 A |
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BSC090N03MS IEC61249-2-21 090N03MS |