MOSFET BTA Search Results

Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

ufn240

Abstract: 25jo TH 2190 mosfet
Contextual Info: POWER MOSFET TRANSISTORS UFN240 UFN242 UFN243 200 Volt, 0.2 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

Contextual Info: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package

C549B

Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 in t e r r ii Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative U ltraFE T process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

8D-13

Contextual Info: _ Si9422DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product VostV Rds ON) <ß) Id (A) 200 0 .420 @ V GS = 10 V ± 1 .7 D O S O -8 d: 13 0 Œ Œ CZ ID 0 XI D Z3 0 <J| Top View N-Channel MOSFET RATIN G S

Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching

Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching

Contextual Info: Ordering number: ENN6961 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features Package Dimensions • C om posite type with a P-C hannel Sillicon M O SFE T unit : mm M C H 3308 and a Schottky B arrier D iode (SB S006M ) 2 1 9 5 contained in one package facilitating high-density

M57918L

Abstract: M57924L M57919L JS225010 JS224510 M57918 D2245 JD225005 d22-5003 M57924
Contextual Info: POIilEREX I NC L.ME D mn/Bta • 7 2 c1 4 b E l 0D0L.Sb7 GflT * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 FETMOD MOSFET POWER MODULES

Contextual Info: Ordering number : ENN6973 | _ N-Channel and P-Channel Silicon MOSFETs ISAfÊYO 1 MCH6618 / Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • The MCH6618 encapsulates an N-channel MOSFET

FSV 052

Abstract: CA3130T A3130 ICAN-6080 equivalent ic of ca 3130 738R ICAN-6668 IC1 CA3130 CA 3130 SCHEMATIC DIAGRAM
Contextual Info: C A 3130A CA 3130 ¡2 H a r r i s BiMOS Operational Amplifiers with MOSFET Input/C M O S Output A u g u st 1991 Features D escription • MOSFET Input Stage Provides: C A 31 3 0 A and C A 31 3 0 are In te g ra te d -c irc u lt operational am plifiers th a t c o m b in e th e a dvantage o f both C M O S and

Contextual Info: Ordering number: ENN7007~| P-Channel Silicon MOSFET MCH3307 'SAjiYOi Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. 2167A • 2.5V drive. MCH3307] ,0.15 2.0 0.85 1 : Gate

Contextual Info: Ordering number : ENN7008 ] P-Channel Silicon MOSFET MCH3308 ISAtiYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4 V drive. [MCH3308] 0.85 1 : Gate 2 : Source

ufnd123

Abstract: UFND120
Contextual Info: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION

marking YB

Abstract: 5LN01SS
Contextual Info: Ordering number : ENN6560[ N-Channel Silicon MOSFET 5LN01SS ISAfiYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. unit : mm 2179 [5LN01SS] 1.4 0.25 0 .1. ¿ ft ' i

Contextual Info: Ordering number: ENN7009 P-Channel Silicon MOSFET MCH3312 SANYO Ultrahigh-Speed Switching Applications Package Dimensions Features • Low O N -resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4V drive. [M C H 3 3 1 2 ] , Specifications 0.85

IRFP140

Abstract: DI 944
Contextual Info: PD-9.442C International S Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

IRFP240

Abstract: irfp240 ir
Contextual Info: PD-9.444C International S Rectifier IRFP240 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0.18Q

Contextual Info: Ordering number : ENN6997 ] N-Channel Silicon MOSFET CPH3407 IS A /iY O i Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2152 A [CPH3407] 2.9 ^ 0 .4 ^ 0. 15.

G-120 C Mosfet

Contextual Info: IRFW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ~ 0.04 Í2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ 175* »Operating Temperature