MOSFET CHARACTERSTICS Search Results

EIA-541

Abstract: F7101 IRF7101 IRF7601 MS-012AA
Contextual Info: PD - 95202 IRF7402PbF Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 20V

Contextual Info: PD - 95202 IRF7402PbF Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free Description HEXFET Power MOSFET A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V

EIA-541

Abstract: IRF7601
Contextual Info: PD - 96071A IRF7402UPbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5

irf760

Contextual Info: PD - 93851 IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

IRF7402

Abstract: IRF7601
Contextual Info: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

Contextual Info: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance

Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

MPF 120

Abstract: TC429
Contextual Info: TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply

Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

TC429CPA

Abstract: for Push-Pull TL494 Power Supply TL494 TC426 TC429 tl494 24v TL494 pin details ,tl494 application notes tc4427 5v dc power supply with TL494
Contextual Info: M TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply

F 0513A

Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

TPS5429x

Abstract: TPS54290 TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292 0513a
Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

F 0513A

Abstract: TPS54290PWPR TPS54290 TPS54290PWP TPS54291PWP TPS54291PWPR TPS54292 MSS1048-332L 0513a
Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

Contextual Info: M TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply

Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

TPS54290

Abstract: TPS54290PWP TPS54290PWPR TPS54291PWP TPS54291PWPR TPS54292
Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

siemens igbt chip

Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Contextual Info: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional

Back-Light driver 6pin

Abstract: PIC8313
Contextual Info: PIC8313 High Efficiency, Const Current WLED Driver FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ On board power MOSFET Drives up to 4 strings of parallel LEDs Up to 87% efficiency 1.46MHz Fixed switching frequency Open load shutdown Low 250mV feedback voltage

PS60N60

Abstract: MOSFET 60AMP POWER TRANSISTOR 60amp TRANSISTOR MOSFET 60AMP
Contextual Info: E L E C T R O N I C PS60N60 N-Channel Enhancement Mode Field Effect Transistor - 60Amp 60Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS ON

PS75N75

Abstract: MOSFET MOSFET CHARACTERSTICS
Contextual Info: E L E C T R O N I C PS75N75 N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS ON

Power IC

Abstract: MOSFET CHARACTERSTICS PS1518 TSOT23 adjustable zero span amplifier ic
Contextual Info: PS1518 High Efficiency, Fixed Frequency WLED Driver FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ On Board Power MOSFET Drives up to 8 Series White LEDs Up to 87% Efficiency Over 645 KHz Fixed Switching Frequency Open Load Shutdown Low 100mV Feedback Voltage Soft Start/PWM Dimming

Contextual Info: ICE47N65W Product Summary ID N-Channel Enhancement Mode MOSFET 47A Max V BR DSS ID = 1mA 650V Min rDS(ON) VGS = 10V 0.063Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability