MOSFET DE 120 VOLTS 10A Search Results

Contextual Info: 7294621 POWEREX IN C 98D 02751 ~D T - j f - ! 3 JS014501 JS0150Û1 m /HBtEX Tentative Powerex, Inc., Hlllls Street^ Youngwood, Pennsylvania 1S697 412 925-7272 D E | TSTMbBl U0QE7S1 0 | MOSFET 10 A m p e re s /4 5 0 -5 0 0 V olts Dimension Inches Millimeters

TERMOPAR tipo j

Abstract: tiristor potencia tiristor scr CATALOGO DE TRANSISTORES potenciometro 10k tiristor SCR alta potencia reles ESTADO solido tiristor 7,5 A 220 V datasheet potenciometro b 10k TRANSFORMADORES
Contextual Info: ESPECIALÍSTA MUNDIAL NA TECNOLOGIA DE RELÉS DE ESTADO SÓLIDO Montagem em PCB Montagem em Painéis Montagem em Trilho DIN Relés de Controle de Estado Sólido Módulos I/O C rydom é sinônimo de

300 volt 5 ampere mosfet

Abstract: JS012502 13002 FL sr 13002
Contextual Info: 7294621 POWEREX INC ' Tfl DE 1 7 2 T 4 t i S l GG0277S E | JS012502 JS013002 fo m cn sr T" 39-13 Tentative Single EXMOS MOSFET Powerex, Inc., Hillls S treet, Youngwood, Pennsylvania 15697 412 925-7272 20 Amperes/250-300 Volts Description Dimension A Inches

UFNF123

Abstract: UFNF120
Contextual Info: U NITRO DE CORP 9347963 ^2 U N ITRO DE DE CORP 0D1DÖS7 92D 10827 POWER MOSFET TRANSISTORS ufnfi2o 100 Volt, 0.30 Ohm N-Channel UFNF122 UFNF123 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

power mosfet 350v 30a to 247

Contextual Info: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR — I R 1 7 1 2 0 1 2 1 1 2 2 /1 2 3 i F - - T f l / D E T b M 2 m G INC_ 98 D 05 0 6 9 D D S D b T b ? '/ N-CHANNEL POWER MOSFETS | / FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

1rf1010

Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
Contextual Info: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

4655M52

Contextual Info: • International gig Rectifier MA5S452 DG15SD2 TTD « I N R PD-9.756 IRFP264 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

OA 207 B diode

Abstract: IRF120 IRFI20 dioda 30 Ampere irf121 IRF122 IRF123 IRFt20
Contextual Info: 3875081 G E SOLID _STATE_~üï DE 3A7S0Ö1 DDlflEb4 □ f o T~ 3 J - // - Standard PowerMOSFETs IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors

Contextual Info: MIL-PRF-38534 CERTIFIED MM.S.KENNEDY . S . KE N N E D YCORP. C O RP . 4303 10 AMP, 75 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FEATURES: 7 5 V , 1 0 A mp C apabilit y Ultra Lo w T hermal Resistance - Junction to C ase - 1 . 5 ° C / W (Each M O S FE T)

IRFF121

Abstract: IRFF120 IRFF122 IRFF123
Contextual Info: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

marking M5D

Abstract: IRC530 RC530 ScansUX1007 ww1 sd
Contextual Info: PD-9.454D International k 1Rectifier IRC530 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S ~ 1 0 0 V R DS{on = 0 . 1 6 0

IRFPG40

Contextual Info: International @ Rectifier PD-9.576B IRFPG40 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 1 0 0 0 V ^DS on = 3 -5 Í2

Contextual Info: 4Û S S 4S 2 International e Rectifier IN R PD-9.529B IRCZ44 HEXFET® Power M O SFET • • • • • • QG14bSM SSS • IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: PD-9.615A International i“R Rectifier IRCZ24 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 6 0 V R DS on - 0 .1 0 Q lD = 1 7 A

Power output ic la 4451 datasheet

Abstract: output ic la 4451 datasheet la 4451 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1
Contextual Info: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSS913AOD

Contextual Info: FSS913AOD, FSS913AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs January 1998 Features Description • 10A, -100V, rDS ON = 0.280Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRF641

Abstract: IRF643 IRF841 PFC55
Contextual Info: El 3875081 d F | 3ö7SDöi DaiagsT a |~ G E SOLID Standard Power M O S FE T s STATE 01E 1 8 3 59 D IRF641, IRF643 F ile N u m b e r 1585 Power MOS Field-Effect Transistors

Contextual Info: PD-9.593B International g ] Rectifier IRC840 HEXFET® P ow er M O SFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V R DS on = 0 - 8 5 Q lD = 8.0A

Contextual Info: International ioR Rectifier 4ÔS5452 0 0 1 S 3 flô PD-9.753 IRFIZ44G INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • • I NR Û1T Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

F9Z34

Contextual Info: m 4flSS4S2 DDii,3fi ßci2 • inr pd-9.648a International Imr] Rectifier IR F9Z34 HEXFET« Power MOSFET • • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching

UFN520

Abstract: UFN523 USD935 UFN522 G451 250M S101 UFN521 C1347 unitrode Applications Note
Contextual Info: T2 UNITRODE CORP 9347963 U N IT R OD E » F § ci 3 4 7 ,:l b3 92D CORP 0010705 107 02 D V UFN520 UFN521 UFN522 UFN523 POWER MOSFET TRANSISTORS 100 Volt, 0.3 Ohm N-Channel FEATU RES DESCRIPTION • • • • • « The Unitrode power MOSFET design utilizes the most advanced technology available.