MOSFET DE RF Search Results

evld02

Abstract: IXDD415 DEIC420 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC IXLD02 SOP28 Package DE-275 EVDD415 SOP28 socket
Contextual Info: DE-Series MOSFET, DEIC420 And SOP-28 IC Device Installation & Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

DE-Series

Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high

m7 rectifier diode

Contextual Info: UN I T R O D E CORP 9347963 UNITRO DE T2 DE~| T3l47clti3 DDlGTSb 92D CORP POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology

J1025

Contextual Info: 7 2 9 4 6 2 1 POWEREX I NC Tfi DE | ? 2 T 4 t i S l DD05771 S I T-39-13 isomerst J1025 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 20 Amperes/50 Volts Description Powerex Single EXMOS™ MOSFET

mospower applications handbook

Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
Contextual Info: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode

Contextual Info: UNISONICTECHNOLOGIESCO., LTD US201/A/B/C CMOS IC H I GH -SI DE POWER SWI T CH ES WI T H FLAG ̈ DESCRI PT I ON The UTC US201/A/B/C series are 80m high-side power switches. There’s internal single low voltage N-Channel MOSFET which makes it an ideal for all USB applications. This MOSFET

PCF35N08

Abstract: RFK35N08 RFK35N10
Contextual Info: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

DF378F

Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Contextual Info: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

Contextual Info: -8368602 SO LITRO N a I • JL m DE V I C E S INC a bl DE | A B h f l b D E 0 D D 03 2 4 fa u ■ \/ i-jy-io § ;, Inc. S P E C I F I C A T I O N S SDT15 N0: TYPE: MAXIMUM RATINGS C A SE : POWER T 0 "3 MOSFET ^6 0 N-CHANNEL M ILL PINS Vpg Vol tage , Drain to Source

Contextual Info: I / I 1 A dvanced L in ea r De v ic e s , Inc . ALD2704A/ALD2704B ALD2704 DUAL RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD2704 is a dual monolithic operational amplifier with MOSFET input that has rail-to-rail input and output voltage ranges. The input

sop-12 package

Abstract: DEIC420
Contextual Info: RF MOSFET Gate Drive 1C Pr°?uct Lineof D ire c te d Energy, Inc. A n nfX Y S Company The DEIC 420 ultra-fast high current driver is optimized to drive DEI DE-Series MOSFETs for high efficiency performance in RF generators, laser diode drivers, pulse generators, and high frequency power conversion applications. It is designed to switch power

vienna rectifier

Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
Contextual Info: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac

JS0245A1

Contextual Info: 72 94 62 1 POWEREX INC DE Í 7 2 T 4 b E l ¿ g M M JE lM fY ' ^ V W ilK A ODGS?^ 7 i~ JS0245A1 JS0250A1 T— 39— 13 Tentative Single EXMOS MOSFET Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 15 Amperes/450-500 Volts Dimension

Contextual Info: UNISONICTECHNOLOGIESCO., LTD US2175 CMOS IC DU AL U SB H I GH -SI DE POWER SWI T CH  DESCRI PT I ON The US2175 is a high-side power switch with two channels. It particularly designed for the Universal Serial Bus USB including self-powered and bus-powered types. The RDS(ON) of the MOSFET

y 6763

Contextual Info: TE UNITRODE CORP 9347963 D E | c1347c]b3 DDIOSOÛ 3 | ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability

con tech

Abstract: ay dm gate ng CHANNEL WELL TECH
Contextual Info: u TMOS What’s An Enhancement-Mode, Silicon Gate, Power MOSFET? It is a po w e r transisto r that uses M etal O xid e S e m icon ducto r tech nolog y to fabricate a Field Effect Transistor. The de vice is con tro lled by applying a volta ge to the M O S gate to enhance

Contextual Info: June 1998 FAIRCHILD M lC O N D U C T O R FDR4420A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features T h e S upe rS O T -8 fam ily of N -C hannel Logic Level M O S F E T s have been de signed to provide a low profile, sm all footprint

bergquist ge

Abstract: transistor dk qq
Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m il W aveFET™ de vice s are an ad van ced series of po w e r M O SFETs w hich utilize M o to ro la ’s

Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s

marking 2904

Abstract: MDC1000B MDC1000 318E-04
Contextual Info: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers

Contextual Info: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

Motorola 2N50

Abstract: 2N50M Motorola t 2N50
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Su rface M o u n t or Insertion M ount TM O S POWER FET 2 AMPERES rDS on = 4 OH M S