MOSFET FQ TRANSISTOR Search Results

ISL6529

Abstract: ISL6529A ISL6529ACB ISL6529ACBZ ISL6529ACR MO-220
Contextual Info: ISL6529, ISL6529A Data Sheet April 12, 2005 Dual Regulator–Synchronous Rectified Buck PWM and Linear Power Controllers The ISL6529, ISL6529A provide the power control and protection for two output voltages in high-performance graphics cards and other embedded processor applications.

Contextual Info: ISL6529, ISL6529A Data Sheet April 12, 2005 Dual Regulator–Synchronous Rectified Buck PWM and Linear Power Controllers The ISL6529, ISL6529A provide the power control and protection for two output voltages in high-performance graphics cards and other embedded processor applications.

fn9070

Contextual Info: ISL6529, ISL6529A Data Sheet January 3, 2005 Dual Regulator–Synchronous Rectified Buck PWM and Linear Power Controllers The ISL6529, ISL6529A provide the power control and protection for two output voltages in high-performance graphics cards and other embedded processor applications.

13N50c

Contextual Info: QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

4410D

Abstract: s4410
Contextual Info: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC5033 A d ju s t a b le Synchro nous DC-DC C o n v e rte r Applications • • • • • • • • • • • 3.3V power supply for Pentium based CPU motherboards • 3.45V power supply for AMD-K5™ CPU

mosfet fq transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

Contextual Info: S E M IC O N D U C T O R w w w .fairchildsem i.com tm RC5033 A d j u s t a b l e Synchr onous DC-DC Conver t er Applications • • • • • • • • • • • 3.3V power supply for Pentium based CPU motherboards • 3,45V power supply for AMD-K5™ CPU

Contextual Info: S E M IC O N D U C T O R w w w .fairchildsem i.com tm RC5033 A d j u s t a b l e Synchr onous DC-DC Conver t er Applications • • • • • • • • • • • 3.3V power supply for Pentium based CPU motherboards • 3,45V power supply for AMD-K5™ CPU

IRCZ34

Abstract: SOLID STATE 643-1 IRCZ34-007 K 3911 TO220H 3911
Contextual Info: H E D I MflSSMSE 0000=142 IN T E R N A T IO N A L 0 | p r 0 v ls i0 nal D ata S h e e t No. P D -9.5 90 RECTIFIER INTERNATIONAL RECTIFIER T-39 -11 REPETITIVE AVALANCHE AND dv/dt RATED LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE Current Sense IRCZ34

3B2S

Abstract: df3p03
Contextual Info: M OTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 100 m ii

LM3001

Abstract: LM3101
Contextual Info: LM3101 National Semiconductor LM3101 Secondary-Side PWM Controller General Description Features The LM3101 is a precision high-speed PWM controller. It is designed to provide secondary-side feedback for offline Switch-Mode Power Supplies SMPS using pulse communi­

8 PIN RELAY 6V dc pla circuit diagram

Contextual Info: LinÇAB_ ¡ss Dual High Side TECHNOLOGY M icropow er MOSFET Driver F€flTUft€S D CSC RIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications.

transistor DK ql

Abstract: marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMSF3300/D DATA Advance Information — MMSF33W WaveFETTM Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor I WaveFETM devices are an advanced series of power MOSFETS which utilize Motorola’s

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Contextual Info: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has

1RFAF40

Abstract: irfaf42 dts110
Contextual Info: HE D I 4Ö554S2 GQDci 57 G 4 | Data Sheet No. PD-9.581A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF4Q IRFAF4S HEXFET TRANSISTORS N-CHANNEL Product Summary 900 Volt, 2.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package

DIODE 20A 600V

Contextual Info: £ÿjSGS-THOMSON n0œilLI0ÎIM [iïlBCi STTA2006P I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 20A I f (a v ) V 600V rrm trr Vf (typ) 30ns (max) 1.5V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWHEEL MODE” OPERA­

BF964

Contextual Info: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:

1R2151

Abstract: ABLEBONd 84-1 IR2161 IR2151 EZ 711 293 MP150 Self-Oscillating Half-Bridge Driver aa vb 399
Contextual Info: International IQR]Rectifier F WRHlMl . n Q Data Sheet No. PD-6.034G IR2151 n i I A T I M rs W W W l Im ImI I 1 1 1 1 V«# Features J a i F J R R in r s i= hi# I \ I ^ W laM n c ? i\ / i= D 1m# 1 VI V I n i V Product Summary • Floating channel designed for bootstrap operation

pspice model for ttl

Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Contextual Info: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q

LZ44N

Contextual Info: Prelim inary Information Raytheon Electronics Semiconductor Division R C 5033 A dju stab le Synchronous DC-DC C o n verter Features Applications • • • • • • • • • • • 3.3V power supply for Pentium based CPU motherboards • 3.45V power supply for AMD-K5™ CPU

K220A

Contextual Info: UCC1585 UCC2585 UCC3585 UNITRO IDE Low Voltage Synchronous Buck Controller FEATURES Resistor Programmable 1.25V to 4.5V VoUT 2.5V to 6V Input Supply Range 1% DC Accuracy High Efficiency Synchronous Switching Drives P-channel High Side and N-channel (Low Side) MOSFETs

mosfet LT 438

Abstract: 9vt018v 9vt016v 110 AC to 12V dc transformer xnor gate ttl 110 volt ac transformer less power supply 6v fet JTW 74hc single zener diode a24 6V DC motor
Contextual Info: LTC1155 u i m TECHNOLOGY FCRTUR6S Dual High Side Micropower MOSFET Driver DCSCRIPTIOn * The LTC1155 dual high side gate driver allows using low cost N-channel FETs tor high side switching applications. An internal charge pump boosts the gate above the posi­

TRANSFORMER 250V 11.8v

Abstract: ac voltage regulator using SCR circuit diagram 15v output RC snubber scr design -crowbar circuits snubber CIRCUITS mosfet irf840 mosfet drive circuit diagram scr driver ic for rectifier 3 phase SCHEMATIC POWER SUPPLY irf840 24V 10A SMPS circuit diagram snubber circuit for mosfet TL 188 TRANSISTOR PIN DIAGRAM
Contextual Info: LM3101 N a t i o n a l S e m i c o n d u c t o r LM3101 Secondary-Side PWM Controller General Description Features The LM3101 is a precision high-speed PWM controller. It is designed to provide secondary-side feedback for offline Switch-Mode Power Supplies SMPS using pulse communi­

Contextual Info: MOTOROLA Order this document by MMSF7N03Z/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Medium Power Surface Mount Products TMOS Single N -C hannel w ith M onolithic Z ener ESD P rotected G ate EZFETs™ are an advanced series of power MOSFETs which utilize