Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET HIGH VOLTAGE Search Results

    MOSFET HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GR331AD7LP333KW01D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose PDF

    MOSFET HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    f10n65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original
    10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 f10n65 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF730 Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor


    Original
    UF730 O-252 O-251 O-220 O-220F UF730L-TA3-T UF730G-TA3-T UF730L-TF3-T UF730G-TF3-T UF730L-TM3-T PDF

    TSC4427

    Abstract: TSC4426 TSC4428 MAX4427 MAX4427CPA MAX4426 MAX4426CPA MAX4426CSA MAX4428 18V00
    Contextual Info: 19-0132; Rev 2; 6/06 Dual High-Speed 1.5A MOSFET Drivers The MAX4426/MAX4427/MAX4428 are dual monolithic MOSFET drivers designed to translate TTL/CMOS inputs to high voltage/current outputs. The MAX4426 is a dual inverting power MOSFET driver. The MAX4427 is a dual


    Original
    MAX4426/MAX4427/MAX4428 MAX4426 MAX4427 MAX4428 MAX4426/ MAX4427/MAX4428 MAX4426/MAX4427/MAX4428 TSC4427 TSC4426 TSC4428 MAX4427CPA MAX4426CPA MAX4426CSA MAX4428 18V00 PDF

    BS108ZL1G

    Abstract: BS108 PPAP MANUAL bs108 mosfet
    Contextual Info: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original
    BS108 BS108/D BS108ZL1G BS108 PPAP MANUAL bs108 mosfet PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    O-220 QW-R502-053 PDF

    Contextual Info: The Leader in High Temperature Semiconductor Solutions CHT-NMOS40XX - DATASHEET Version: 03.8 23-Mar-12 Last Modification Date High-Temperature, 40V N-channel Power MOSFET General description Features The CHT-NMOS-40xx is a high voltage Nchannel power MOSFET family designed to


    Original
    CHT-NMOS40XX 23-Mar-12 CHT-NMOS-40xx CHT-NMOS-4005: CHT-NMOS-4010: CHT-NMOS40 CHT-NMOS-4020: DS-090379-V03 PDF

    Contextual Info: CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ‹ Higher Current Rating withstand high energy in the avalanche mode and switch ‹ Lower Rds on efficiently. This new high energy device also offers a ‹ Lower Capacitances


    Original
    CMT04N60 O-220/TO-220FP PDF

    Contextual Info: CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ‹ Higher Current Rating withstand high energy in the avalanche mode and switch ‹ Lower Rds on efficiently. This new high energy device also offers a ‹ Lower Capacitances


    Original
    CMT04N60 O-252 O-220/TO-220FP PDF

    Contextual Info: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can


    Original
    LM2724A LM2724A SNVS242A PDF

    2P50EG

    Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
    Contextual Info: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original
    MTP2P50E O-220 MTP2P50E/D 2P50EG 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes PDF

    48V SMPS

    Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
    Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original
    ISL6144 FN9131 ISL6144 48V SMPS smps 48v 12v ISL6144IV ISL6144IVZA MO-220 0805 resistor package PDF

    MTP1N60E

    Abstract: AN569 MTP1N60
    Contextual Info: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original
    MTP1N60E r14525 MTP1N60E/D MTP1N60E AN569 MTP1N60 PDF

    AN569

    Abstract: MTW24N40E mosfet transistor 400 volts.100 amperes
    Contextual Info: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original
    MTW24N40E r14525 MTW24N40E/D AN569 MTW24N40E mosfet transistor 400 volts.100 amperes PDF

    MTW14N50

    Abstract: MTW14N50E AN569 MT*14N50E MTW14N50E-D
    Contextual Info: MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original
    MTW14N50E r14525 MTW14N50E/D MTW14N50 MTW14N50E AN569 MT*14N50E MTW14N50E-D PDF

    Contextual Info: 2SK2253-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original
    2SK2253-01MR O-220F15 SC-67 PDF

    AN569

    Abstract: MTB23P06V MTB23P06VT4
    Contextual Info: MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTB23P06V r14525 MTB23P06V/D AN569 MTB23P06V MTB23P06VT4 PDF

    AN569

    Abstract: MTB36N06V MTB36N06VT4
    Contextual Info: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTB36N06V r14525 MTB36N06V/D AN569 MTB36N06V MTB36N06VT4 PDF

    3055V

    Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v PDF

    isl6215

    Abstract: ISL6207 ISL6207CB ISL6216 ISL6223 MO-220 TB363 TB389 amd reflow profile
    Contextual Info: ISL6207 Data Sheet February 2003 FN9075.3 High Voltage Synchronous Rectified Buck MOSFET Driver Features The ISL6207 is a high frequency, dual MOSFET driver, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology in mobile


    Original
    ISL6207 FN9075 ISL6207 ISL6223, ISL6215, ISL6216, isl6215 ISL6207CB ISL6216 ISL6223 MO-220 TB363 TB389 amd reflow profile PDF

    high-speed power mosfet 2Mhz

    Abstract: LM27212 5Vto28V
    Contextual Info: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically


    Original
    LM27222 LM27222 SNVS306A high-speed power mosfet 2Mhz LM27212 5Vto28V PDF

    3055V

    Abstract: MTD3055VT4 MTD3055V 369D AN569
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569 PDF

    AN569

    Abstract: MTB30P06V MTB30P06VT4
    Contextual Info: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTB30P06V r14525 MTB30P06V/D AN569 MTB30P06V MTB30P06VT4 PDF

    t3055vl

    Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
    Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4 PDF

    5P06V

    Abstract: AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power
    Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD5P06V r14525 MTD5P06V/D 5P06V AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power PDF