MOSFET IR 840 FEATURES Search Results

TEA1507P

Abstract: TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE
Contextual Info: eratum.qxd 26/2/04 2:49 pm Page 1 Semiconductors - Power Supply & Control Switching Regulators Fixed Negative & Positive Type Manuf Package IOUT SW VOUT VIN (A)Max (V)Typ (V)Min-Max S/down SMT Features LT1300CN8 LT DIP8 0•62 3·3/5 1·8-8 N LM2597HVN-3·3

UFN841

Abstract: UFN041 mosfet ir 840 features Hjc 22
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

mosfet ir 840 features

Abstract: mosfet ir 840 AD6C011 MOSFET 800V 10A
Contextual Info: AD6C011 1 Form A 800V / 35Ω MOSFET Output Solid State Relay Description Features •      The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode

Contextual Info: AD6C011 1 Form A 800V / 35 MOSFET Output Solid State Relay Description Features •      The AD6C011 is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The relay consists of an IR LED optically coupled to a Photo Diode

Contextual Info: PD - 96401 AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

SL3206

Abstract: mosfet ir 840 AUIRFS3206TRR
Contextual Info: PD - 96401A AUTOMOTIVE GRADE AUIRFS3206 AUIRFSL3206 Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AUFP2907

Contextual Info: PD -97692 AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax

AUFP2907

Contextual Info: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax

AUFP2907

Abstract: AUIRFP2907
Contextual Info: PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax

Contextual Info: CPC1978J i4-PAC Power Relay Blocking Voltage Load Current On-resistance RθJC CPC1978J 800 2.5 2.3 0.35 Units VP Arms Ω °C/W Features • • • • • • • • • • • Compact i4-PAC Power Package Low Thermal Resistance Heat Sink Option Handle Load Currents Up to 2.5Arms free air

MIPF2520

Abstract: MIPF2520D MAX8581 rating of mosfet for 3 phase 1 hp
Contextual Info: 19-0593; Rev 0; 11/06 KIT ATION EVALU E L B AVAILA 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and

MIPF2520D

Abstract: MDT2520-CR MAX8581 rating of mosfet for 3 phase 1 hp D2812C LP03310
Contextual Info: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and

Contextual Info: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and

IRFB4229PbF

Abstract: IRFB4229
Contextual Info: PD - 97078 IRFB4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

IRFP4229

Contextual Info: PD - 97079A IRFP4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

CPC1978

Abstract: CPC1978J
Contextual Info: CPC1978 i4-PAC Power Relay Parameter Blocking Voltage Load Current, TA=25ºC With 5°C/W Heat Sink No Heat Sink On-resistance RθJC Rating 800 Units VP 1.85 0.75 2.3 0.35 Arms Ω °C/W Features • • • • • • • • • Compact i4-PAC™ Power Package

mosfet 40a 200v

Abstract: SSH40N20 SSH40N15
Contextual Info: N-CHANNEL POWER MOSFETS SSH40N20/15 FEATURES • L o w e r R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

L175C

Abstract: irfs4229 IRFS4229PBF
Contextual Info: PD - 97080A IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

irfs4229

Contextual Info: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97080B IRFS4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

MIPF2520D

Contextual Info: 19-0593; Rev 1; 1/07 KIT ATION EVALU LE B A IL A AV 2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power Features The MAX8581/MAX8582 high-frequency step-down converters are optimized for dynamically powering the power amplifier PA in CDMA handsets. They integrate a highefficiency PWM step-down converter for medium- and

E3P303

Abstract: MARKING 842 SCHOTTKY 842 so8 soic-8 marking
Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF

mosfet ir 840 features

Abstract: mosfet ir 840 IRFP2907 IRFP2907 Application Notes
Contextual Info: PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● D Integrated Starter Alternator 42 Volts Automotive Electrical Systems VDSS = 75V RDS on = 4.5mΩ Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance