MOSFET IRF7313 Search Results

Contextual Info: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier

C123 j.s

Contextual Info: International HSR Rectifier PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss = 30V ^DS on = 0.0290 Top View Description

IRF7313

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1480 IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1

PN channel MOSFET 10A

Contextual Info: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2

Contextual Info: f H P D - 9 .1 4 8 0 A International IG R Rectifier IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channei MOSFET Surface Mount Fully Avalanche Rated Voss = 30V 52 a E r - i G2 n r — RDS on = 0.029Q Top View

EIA-541

Abstract: F7101 IRF7101 PN channel MOSFET 10A
Contextual Info: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description

f7101

Abstract: irf7313pbf MARKING CODE SO-8 PIC16F877A circuit diagram EIA-541 IRF7101
Contextual Info: PD - 95039 IRF7313PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description

EIA-541

Abstract: MS-012AA
Contextual Info: PD - 96072A IRF7313UPbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description VDSS = 30V RDS on = 0.029Ω Top View Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91480B IRF7313 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

IRF7313

Abstract: MS-012AA 1g26 91480
Contextual Info: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description

IRF7313

Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
Contextual Info: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

IRF7313

Abstract: MS-012AA 1g26
Contextual Info: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description

Contextual Info: PD - 9.1559A International IG R Rectifier IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated

Contextual Info: International IOR Rectifier P D - 9.1559 IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses • Fully Avalanche Rated V dss = 30V

IRF7303

Abstract: IRF7313 IRF7503 IRF9956
Contextual Info: PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V

EIA-541

Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
Contextual Info: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2

Contextual Info: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2

EIA-541

Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
Contextual Info: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2

IRF9956

Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503 MS-012AA
Contextual Info: PD - 91559B IRF9956 l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.10Ω

Contextual Info: IRF7313PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 0.029 Ω 22 Qg (typical) ID nC 6.5 (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

analog switch circuit using mosfet

Abstract: APU3039 25TQC15M APU3039M APU3039VN IRF7458 IRF7466 Parallel operation mosfet 21kHz amplifier 300 Volt mosfet schematic circuit
Contextual Info: Technology Licensed from International Rectifier APU3039 SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V

6TPC330M

Abstract: 200khz power mosfet 8A 25TQC15M DO5022HC IRF7458 IRF7466 IRU3039 IRU3039CH IRU3039CHTR jc23
Contextual Info: Data Sheet No. PD94649 revB IRU3039 PbF SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

Contextual Info: TPS2310 TPS2311 www.ti.com SLVS275G – FEBRUARY 2000 – REVISED NOVEMBER 2006 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING FEATURES • • • • • • • • • • Dual-Channel High-Side MOSFET Drivers