MOSFET IRFP 250 N Search Results

mosfet irfp 250 A

Contextual Info: Standard Power MOSFET IRFP 254 VDSS ID cont RDS(on) = 250 V = 23 A = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 250 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient

IRFP 640

Abstract: IRFP254
Contextual Info: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient

IRFP 640

Abstract: IRFP264 IRFP P CHANNEL
Contextual Info: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient

IRFP 640

Abstract: IRFP P CHANNEL IRFP
Contextual Info: IRFP 250 Standard Power MOSFET VDSS = 200 V ID cont = 30 A Ω RDS(on) = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

N-channel MOSFET to-247

Abstract: NS 106 IRFP 530
Contextual Info: Standard Power MOSFET IRFP 250 VDSS ID cont RDS(on) = 200 V = 30 A Ω = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM

IRFP 640

Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
Contextual Info: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

Contextual Info: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous

20nc50

Abstract: IRFP 450 irfp
Contextual Info: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

IRFP 640

Contextual Info: Standard Power MOSFET IRFP 260 VDSS = 200 V ID cont = 46 A RDS(on) = 55 mW N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient

mosfet irfp 250 N

Abstract: IRFP 260 M w46a Irfp260 transistor irfp
Contextual Info: Standard Power MOSFET IRFP 260 VDSS ID cont RDS(on) = 200 V = 46 A Ω = 55 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

IRFP 450 application

Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
Contextual Info: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

Contextual Info: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V

Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient

Contextual Info: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM

IRFP256

Abstract: H30E2 IRFP 620 irfp254
Contextual Info: H30E271 0054210 E7T • HAS H a r r is IRFP254, IRFP255 IRFP256, IRFP257 N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 19 9 1 Features Package TO-247 TOP VIEW • 21A and 23A, 250V and 275V • rDS on = 0.14 i l and 0 .1 7ft • Single Pulse Avalanche Energy Rated

Contextual Info: H E 0 I 4055455 INTERNATIONAL □□□â?âQ □ | Data Sheet No. PD-9.586A RECTIFIER INTERNATIONAL RECTIFIER I « R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFP 3 6 0 IR FP 3 B2 N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET

IRFP914

Abstract: 9142R G035S7S
Contextual Info: HARRIS SEMICOND SECTOR QU H a r r i s m 43GE571 G035S7S 0 •¡HAS MOE D IRFP9140R/P9141R IRFP914 Z R /P 9 143R Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -1 9 A a n d -1 6 A , -6 0 V a n d -1 0 0 V • i'DS ON = 0 .2 0(1 a n d 0 .3 0 ÎÎ

Contextual Info: IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

IRFP 260 M

Contextual Info: IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP P CHANNEL MOSFET

Abstract: IRFP440B
Contextual Info: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP240B

Contextual Info: IRFP240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP 450 application

Abstract: IRFP340B
Contextual Info: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP250B

Contextual Info: IRFP250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP244B

Contextual Info: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching