MOSFET K30 Search Results

MOSFET K30 Result Highlights (5)

Part	Manufacturer	Description
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

MOSFET K30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GRM31EB3YA106KA12L Abstract: bd9673 BD9673EFJ 6pin transistor for 24v 3 amp bd96 Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.11027EBT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 11027EBT57 BD9673EFJ R1120A GRM31EB3YA106KA12L bd9673 6pin transistor for 24v 3 amp bd96	PDF
bd9673 Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 BD9673EFJ R1120A bd9673	PDF
Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 R1120A	PDF
6PIN IC Abstract: bd9673 Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.11027EAT57 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 11027EAT57 BD9673EFJ R1120A 6PIN IC bd9673	PDF
Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 BD9673EFJ R1120A	PDF
GRM31EB3YA106KA12L Contextual Info: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 BD9673EFJ R1120A GRM31EB3YA106KA12L	PDF
Contextual Info: BD9673EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 R1120A	PDF
bd9673 Abstract: bd9763 Contextual Info: BD9673EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ	Original	BD9673EFJ 12027ECT57 BD9673EFJ R1120A bd9673 bd9763	PDF
EN8624 Abstract: 2SK3095LS Contextual Info: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3095LS EN8624 150described EN8624 2SK3095LS	PDF
2SK3099LS Abstract: K3099 Contextual Info: 2SK3099LS Ordering number : EN8628 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3099LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3099LS EN8628 150described 2SK3099LS K3099	PDF
BUK108-50GS Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.	OCR Scan	BUK108-50GS BUK108-50GS OT404	PDF
2SK3095LS Contextual Info: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3095LS EN8624 PW10s, 2SK3095LS	PDF
5V VSG MOSFET Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.	OCR Scan	BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch	PDF
japan 8622 Abstract: 2SK3093LS Contextual Info: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3093LS EN8622 150described japan 8622 2SK3093LS	PDF

2SK3097LS Contextual Info: 2SK3097LS Ordering number : EN8626 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3097LS EN8626 150described 2SK3097LS	PDF
2SK3097LS Contextual Info: 2SK3097LS Ordering number : EN8626 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.	Original	2SK3097LS EN8626 PW10s, 2SK3097LS	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
k3022 Abstract: 2SK3022 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown	Original	2002/95/EC) 2SK3022 K3022 k3022 2SK3022	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive	Original	2002/95/EC) 2SK3022 K3022	PDF
K3022 Abstract: 2SK3022 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive	Original	2002/95/EC) 2SK3022 K3022 2SK3022	PDF
K3024 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Package ■ Features • Code U-G2 • Pin Name 1: Gate 2: Drain 3: Source • Avalanche energy capability guaranteed • High-speed switching	Original	2002/95/EC) 2SK3024 K3024 K3024	PDF
K3024 Abstract: 2SK3024 Contextual Info: Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1	Original	2SK3024 K3024 2SK3024	PDF
2SK3045 Abstract: k3045 Contextual Info: Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown	Original	2SK3045 2SK3045 k3045	PDF
K3048 Abstract: 2SK3048 Contextual Info: Power MOSFETs 2SK3048 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed • High-speed switching • Low on-resistance • No secondary breakdown 15.0±0.5 φ 3.2±0.1 ■ Applications	Original	2SK3048 K3048 2SK3048	PDF

MOSFET K30 Search Results

MOSFET K30 Result Highlights (5)

MOSFET K30 Datasheets Context Search

GRM31EB3YA106KA12L

bd9673

6PIN IC

GRM31EB3YA106KA12L

bd9673

EN8624

2SK3099LS

BUK108-50GS

2SK3095LS

5V VSG MOSFET

japan 8622

2SK3097LS

2SK3097LS

Q2N4401

k3022

K3022

K3024

K3024

2SK3045

K3048