MOSFET LOW POWER Search Results

HUF75307D

Contextual Info: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology

Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)

Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT2N10 Power MOSFET 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET N-CHANNEL  DESCRIPTION The UTC UTT2N10 is a complementary enhancement mode MOSFET, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage.

N mosfet 250v 600A

Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Contextual Info: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?

Contextual Info: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02

UTC 30N06

Abstract: 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

30N06L-TA3-T

Abstract: 30N06 mosfet to-220f 60v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

UTT30N06L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

EIA-541

Abstract: IRF7835
Contextual Info: PD - 96080A IRF7835UPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low Qrr l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •

2sk3271

Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
Contextual Info: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters

POWER MOSFET

Abstract: power mosfet low vgs 2SK3270-01 mosfet amplifiers mosfet power amplifier mosfet low vgs 100 W POWER MOSFET
Contextual Info: 2SK3270-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

30N06L-TA3-T

Abstract: 30n06l UTC 30N06 30N06 30N06-TA3-T 30N06-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

TT8M1

Contextual Info: 1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2)

IRF 4310

Abstract: irf7832
Contextual Info: PD - 94594E IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance