MOSFET LOW VGS 1A Search Results

TS16949

Abstract: ZXMN2B01F ZXMN2B01FTA
Contextual Info: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Contextual Info: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Contextual Info: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

MOSFET sot23-6 QG

Abstract: MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23
Contextual Info: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Contextual Info: Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from TY features low onresistance achievable with low gate drive.

Contextual Info: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

AON2411

Contextual Info: AON2411 12V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 1.8V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant ID (at VGS=-4.5V) -12V -20A RDS(ON) (at VGS=-4.5V)

diode marking 226

Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20m @ VGS = 10V • 27m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

p3098

Contextual Info: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: AON6413 30V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=-10V)

ZXMN2F34FHTA

Abstract: TS16949 ZXMN2F34FH
Contextual Info: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

design ideas

Abstract: TS16949 ZXMN2F34FH ZXMN2F34FHTA
Contextual Info: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

D8154

Abstract: ZXMN2F30FH
Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

ZXMN2088

Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

Contextual Info: DMP2066LSD N EW PRODU CT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 40m @ VGS = -4.5V • 70m @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance

C3018LD

Contextual Info: DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device NEW PRODUCT RDS on max ID Max TA = +25°C • Complementary Pair MOSFET • Low On-Resistance 20mΩ @ VGS = 10V 9.1A • Low Gate Threshold Voltage 32mΩ @ VGS = 4.5V 7.2A • Low Input Capacitance

MDS9651

Abstract: MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET
Contextual Info: Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS ON <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent

N3033LD

Contextual Info: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20mΩ @ VGS = 10V • 27mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

P3098LD

Contextual Info: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Dual P-Channel MOSFET • Low On-Resistance 65mΩ @ VGS = -10V -4.4A • Low Gate Threshold Voltage 115mΩ @ VGS = -4.5V -3.2A • Low Input Capacitance • Fast Switching Speed

Contextual Info: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: AON7400B 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS ON at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 30A ID (at VGS=10V) Application

Contextual Info: DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data •  Low On-Resistance 100m @ VGS = -4.5V   120m @ VGS = -2.5V  160m @ VGS = -1.8V  Moisture Sensitivity: Level 1 per J-STD-020D  Very Low Gate Threshold Voltage VGS th ≤ 1V

Contextual Info: Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.