MOSFET M05 Search Results

MIC2042-1YM

Abstract: MIC2042 MIC2042-1BM MIC2042-1BTS MIC2042-2BM MIC2043 MIC2043-1BM MIC2043-2BM
Contextual Info: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications

Contextual Info: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications

M47F

Abstract: MIC2042 MIC2042-1BM MIC2042-1BTS MIC2042-2BM MIC2043 MIC2043-1BM MIC2043-2BM MIC2042-2 M0512-112603
Contextual Info: MIC2042/2043 Micrel MIC2042/2043 Single Channel, High Current, Low Voltage, Protected Power Distribution Switch General Description Features The MIC2042 and MIC2043 are high-side MOSFET switches optimized for general purpose power distribution applications

M05-fET

Contextual Info: IRFW/I710A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVDss “ 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS = 400V

960-1215 MHz transistor 20W

Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

M05-fET

Abstract: power mosfet j 162 D943
Contextual Info: IRFP440A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ ■ B V dss ~ 500 V ^D S(on) =

UTM2054

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

electrolytic capacitor 470uF 63V

Abstract: electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

FOD8384

Contextual Info: FOD8384 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin Features Description • Reliable and High-Voltage Insulation with Greater The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/

APM2605

Abstract: APM2605C STD-020C p-Channel sot-23-6
Contextual Info: APM2605C P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.5A, RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)

APM2305A

Abstract: STD-020C APM2305
Contextual Info: APM2305A P-Channel Enhancement Mode MOSFET Pin Description Features • -16V/-3.5A, RDS ON =60mΩ (typ.) @ VGS=-4.5V RDS(ON)=70mΩ (typ.) @ VGS=-2.5V RDS(ON)=83mΩ (typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

APM2305

Abstract: J-STD-020A marking CODE 001 sot23 code JM
Contextual Info: APM2305 P-Channel Enhancement Mode MOSFET Features • Pin Description D -16V/-3.5A , RDS ON =60mΩ(typ.) @ VGS=-4.5V 3 RDS(ON)=70mΩ(typ.) @ VGS=-2.5V RDS(ON)=83mΩ(typ.) @ VGS=-1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Contextual Info: APM2305A P-Channel Enhancement Mode MOSFET Pin Description Features • -16V/-3.5A, D RDS ON =60mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V G RDS(ON)=83mΩ(typ.) @ VGS=-1.8V • • • S Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged

APM2605

Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
Contextual Info: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTM2054 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTM2054 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

Contextual Info: SFH9240 Advanced Power M05FET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VDS= -200V

DIODE A46

Contextual Info: PRODUCT ^Siltron CATÂLÛ' N-CHANNEL ENHANCEMENT M05 FET 1000V, 4.0A, 3.5Q SDF4N100 JAA SDF4N100 JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

ALQQ

Abstract: mosfet M05
Contextual Info: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage

scr gate driver ic

Abstract: ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
Contextual Info: s s D esig n T ips D T 94-9 IX T K K N A T IO N A I. K l.C t J lU .R CORI*. A IT I.1 C A T 1 0N S K \ ;. 233 K A N S A S Vi'. I I. S K U N D O . C A 911245 I VI . <310>322-333l 1 A \ <.U 11 322-3332 MAXIMIZING THE LATCH IMMUNITY OF THE IR2151 & IR2152 IN BALLAST APPLICATIONS

ST7FAUDIO

Abstract: st7faudioar9 VN1160 st26025a ST26025 CAR ALTERNATOR REGULATOR testing guide L9777B st VN1160 vnh5180 L9777
Contextual Info: Automotive-grade semiconductor devices Selection guide July 2008 Analog Power MEMS Memories Microcontrollers www.st.com/automotive Moving towards a zero-defect capability STMicroelectronics applies an automotive-grade policy designed to deliver products which meet the

RT8205Lzqw

Abstract: RT8205MGQW rt8205 RT8205LGQW rt8205l rt8205lz RT8205MZQW TRANSISTOR marking code M05 DS8205 RT8205LZQW2
Contextual Info: RT8205L/M High Efficiency, Main Power Supply Controller for Notebook Computer General Description Features The RT8205L/M is a dual step-down, switch mode power supply controller generating logic-supply voltages in battery powered systems. It includes two Pulse-Width